MRF6S21140HR3_10 Datasheet, PDF (13/14 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

PRODUCT DOCUMENTATION, TOOLS AND SOFTWARE
Refer to the following documents to aid your design process.
Application Notes
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
• Electromigration MTTF Calculator
• RF High Power Model
For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the
Software & Tools tab on the part’s Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
4
5
Date
May 2007
Feb. 2010
Description
• Removed Lower Thermal Resistance and Low Gold Plating bullets from Features section as functionality
is standard, p. 1
• Removed “Designed for Lower Memory Effects and Wide Instantaneous Bandwidth Applications” bullet
as functionality is standard, p. 1
• Added “Optimized for Doherty Applications” bullet to Features section, p. 1
• Removed Total Device Dissipation from Max Ratings table as data was redundant (information already
provided in Thermal Characteristics table), p. 1
• Operating Junction Temperature increased from 200°C to 225°C in Maximum Ratings table and related
“Continuous use at maximum temperature will affect MTTF” footnote added, p. 1
• Corrected V_DS to V_DD in the RF test condition voltage callout for V_GS(Q) and added “Measured in
Functional Test”, On Characteristics table, p. 2
• Removed Forward Transconductance from On Characteristics table as it no longer provided usable
information, p. 2
• Updated Part Numbers in Table 5, Component Designations and Values, to RoHS compliant part
numbers, p. 3
• Adjusted scale for Fig. 5, Two--Tone Power Gain versus Output Power, to better match the device’s
capabilities, p. 5
• Removed lower voltage tests from Fig. 11, Power Gain versus Output Power, due to fixed tuned fixture
limitations, p. 6
• Replaced Fig. 12, MTTF versus Junction Temperature with updated graph. Removed Amps² and listed
operating characteristics and location of MTTF calculator for device, p. 7
• Added Product Documentation and Revision History, p. 10
• Modified data sheet to reflect RF Test Reduction described in Product and Process Change Notification
number, PCN13232, p. 1, 2
• Added On Characteristic V_DS(on) Min value, p. 2
• Added Electromigration MTTF Calculator and RF High Power Model availability to Product Software, p. 13
RF Device Data
Freescale Semiconductor
MRF6S21140HR3 MRF6S21140HSR3
13