MRF6S21140HR3_10 Datasheet, PDF (5/14 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

TYPICAL CHARACTERISTICS
15.6
30
15.5
η_D ²⁸
V_DD = 28 Vdc, P_out = 30 W (Avg.),
15.4 _{IDQ = 1200 mA, 2--Carrier W--CDMA,}
26
10 MHz Carrier Spacing, 3.84 MHz Channel Bandwidth,
G_ps
15.3 ^{PAR = 8.5 dB @ 0.01% Probability (CCDF)}
--32
--12
IRL
15.2
--36
--15
IM3
15.1
ACPR ^--40
--18
15
--44
--21
2060 2080 2100 2120 2140 2160 2180 2200 2220
f, FREQUENCY (MHz)
Figure 3. 2--Carrier W--CDMA Broadband Performance @ P_out = 30 Watts Avg.
15
42
14.9
40
η_D
14.8
V_DD = 28 Vdc, P_out = 60 W (Avg.),
G_{ps 38}
I_DQ = 1200 mA, 2--Carrier W--CDMA,
10 MHz Carrier Spacing, 3.84 MHz Channel
14.7
Bandwidth, PAR = 8.5 dB @ 0.01%
IRL _--24
--12
Probability (CCDF)
14.6
IM3 ^--27
--15
14.5
--30
--18
ACPR
14.4
--33
--21
2060 2080 2100 2120 2140 2160 2180 2200 2220
f, FREQUENCY (MHz)
Figure 4. 2--Carrier W--CDMA Broadband Performance @ P_out = 60 Watts Avg.
17
I_DQ = 1800 mA
1500 mA
16
1200 mA
15 _{900 mA}
14
600 mA
13
V_DD = 28 Vdc
f1 = 2135 MHz, f2 = 2145 MHz
Two--Tone Measurements, 10 MHz Tone Spacing
12
1
10
100
400
P_out, OUTPUT POWER (WATTS) PEP
Figure 5. Two--Tone Power Gain versus
Output Power
--20
V_DD = 28 Vdc
--25 ^{f1 = 2135 MHz, f2 = 2145 MHz}
Two--Tone Measurements, 10 MHz Tone Spacing
--30
--35
I_DQ = 600 mA
1800 mA
--40
--45
1500 mA
--50
900 mA
--55
1200 mA
--60
1
10
100
400
P_out, OUTPUT POWER (WATTS) PEP
Figure 6. Third Order Intermodulation Distortion
versus Output Power
RF Device Data
Freescale Semiconductor
MRF6S21140HR3 MRF6S21140HSR3
5