MRF6S21060NR1 Datasheet, PDF (8/18 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

Z_o = 10 Ω
Z_load
f = 2170 MHz
f = 2110 MHz
f = 2110 MHz
f = 2170 MHz
Z_source
V_DD = 28 Vdc, I_DQ = 610 mA, P_out = 14 W Avg.
f
MHz
Z_source
Ω
Z_load
Ω
2110
2140
2170
7.59 - j8.39
6.71 - j8.83
5.84 - j8.62
3.31 - j5.35
3.17 - j5.16
3.06 - j4.92
Z_source = Test circuit impedance as measured from
gate to ground.
Z_load = Test circuit impedance as measured
from drain to ground.
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
Z _source
Z _load
Figure 15. Series Equivalent Source and Load Impedance
MRF6S21060NR1 MRF6S21060NBR1
8
RF Device Data
Freescale Semiconductor