MRF6S21060NR1 Datasheet, PDF (1/18 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for W- CDMA base station applications with frequencies from 2110
to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applica-
tions. To be us ed in Clas s AB for PCN - PCS/c ellular radio, WLL and
TD - SCDMA applications.
• Typical 2 - Carrier W - CDMA Performance: V_DD = 28 Volts,
I_DQ = 610 mA, P_out = 14 Watts Avg., Full Frequency Band, Channel
Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain — 15.5 dB
Drain Efficiency — 26%
IM3 @ 10 MHz Offset — - 37 dBc in 3.84 MHz Bandwidth
ACPR @ 5 MHz Offset — - 40 dBc in 3.84 MHz Bandwidth
• Capable of Handling 5:1 VSWR, @ 28 Vdc, 2140 MHz, 60 Watts CW
Output Power
Features
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Internally Matched for Ease of Use
• Qualified Up to a Maximum of 32 V_DD Operation
• Integrated ESD Protection
• Designed for Lower Memory Effects and Wide Instantaneous Bandwidth
Applications
• 200_C Capable Plastic Package
• N Suffix Indicates Lead - Free Terminations. RoHS Compliant.
• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
Document Number: MRF6S21060N
Rev. 4, 12/2006
MRF6S21060NR1
MRF6S21060NBR1
2110 - 2170 MHz, 14 W AVG., 28 V
2 x W - CDMA
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 1486 - 03, STYLE 1
TO - 270 WB - 4
PLASTIC
MRF6S21060NR1
CASE 1484 - 04, STYLE 1
TO - 272 WB - 4
PLASTIC
MRF6S21060NBR1
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain - Source Voltage
Gate - Source Voltage
Storage Temperature Range
Operating Junction Temperature
Table 2. Thermal Characteristics
Characteristic
V_DSS
V_GS
T_stg
T_J
Symbol
- 0.5, +68
- 0.5, +12
- 65 to +150
200
Value ^(1,2)
Vdc
Vdc
°C
°C
Unit
Thermal Resistance, Junction to Case
Case Temperature 79°C, 60 W CW
Case Temperature 76°C, 14 W CW
R_θJC
0.89
1.04
°C/W
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
the MTTF calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
© Freescale Semiconductor, Inc., 2006. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF6S21060NR1 MRF6S21060NBR1
1