MRF6S21060NR1 Datasheet, PDF (13/18 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

B
GATE LEAD
PACKAGE DIMENSIONS
E1
A
2X
E3
DRAIN LEAD
D1
D
4X
e
4X
b1
aaa M C A
2X
D2
c1
H
DATUM
PLANE
2X
E
F
ZONE J
A1
A2
NOTE 7
4
D3
3
2X
E2
E5
E4
ÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇ
E5
BOTTOM VIEW
A
C
SEATING
PLANE
PIN 5
NOTE 8
1
2
CASE 1486 - 03
ISSUE C
TO - 270 WB - 4
PLASTIC
MRF6S21060NR1
NOTES:
1. CONTROLLING DIMENSION: INCH.
2. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M−1994.
3. DATUM PLANE −H− IS LOCATED AT THE TOP OF
LEAD AND IS COINCIDENT WITH THE LEAD
WHERE THE LEAD EXITS THE PLASTIC BODY AT
THE TOP OF THE PARTING LINE.
4. DIMENSIONS “D" AND “E1" DO NOT INCLUDE
MOLD PROTRUSION. ALLOWABLE PROTRUSION
IS .006 PER SIDE. DIMENSIONS “D" AND “E1" DO
INCLUDE MOLD MISMATCH AND ARE DETER−
MINED AT DATUM PLANE −H−.
5. DIMENSION “b1" DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE .005 TOTAL IN EXCESS
OF THE “b1" DIMENSION AT MAXIMUM MATERIAL
CONDITION.
6. DATUMS −A− AND −B− TO BE DETERMINED AT
DATUM PLANE −H−.
7. DIMENSION A2 APPLIES WITHIN ZONE “J" ONLY.
8. HATCHING REPRESENTS THE EXPOSED AREA
OF THE HEAT SLUG.
INCHES
DIM MIN MAX
A .100 .104
A1 .039 .043
A2 .040 .042
D .712 .720
D1 .688 .692
D2 .011 .019
D3 .600 − − −
E .551 .559
E1 .353 .357
E2 .132 .140
E3 .124 .132
E4 .270 − − −
E5 .346 .350
F
.025 BSC
b1 .164 .170
c1 .007 .011
e
.106 BSC
aaa
.004
STYLE 1:
PIN 1. DRAIN
2. DRAIN
3. GATE
4. GATE
5. SOURCE
MILLIMETERS
MIN MAX
2.54 2.64
0.99 1.09
1.02 1.07
18.08 18.29
17.48 17.58
0.28 0.48
15.24 − − −
14 14.2
8.97 9.07
3.35 3.56
3.15 3.35
6.86 − − −
8.79 8.89
0.64 BSC
4.17 4.32
0.18 0.28
2.69 BSC
0.10
RF Device Data
Freescale Semiconductor
MRF6S21060NR1 MRF6S21060NBR1
13