MRF6S21060NR1 Datasheet, PDF (6/18 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

TYPICAL CHARACTERISTICS
− 10
V_DD = 28 Vdc, P_out = 60 W (PEP), I_DQ = 610 mA
Two −Tone Measurements
−20 (f1 + f2)/2 = Center Frequency of 2140 MHz
−30 _{3rd Order}
−40 _{5th Order}
−50 ^{7th Order}
− 60
0.1
1
10
100
TWO −TONE SPACING (MHz)
Figure 7. Intermodulation Distortion Products
versus Tone Spacing
57
55
Ideal
53
P3dB = 49.986 dBm (99.68 W)
51 P1dB = 49.252 dBm (84.18 W)
49
Actual
47
V_DD = 28 Vdc, I_DQ = 610 mA
45
Pulsed CW, 8 μsec(on), 1 msec(off)
f = 2140 MHz
43
28
30
32
34
36
38
40
P_in, INPUT POWER (dBm)
Figure 8. Pulse CW Output Power versus
Input Power
60
V_DD = 28 Vdc, I_DQ = 610 mA
f1 = 2135 MHz, f2 = 2145 MHz
50 _{2−Carrier W−CDMA, 10 MHz Carrier}
Spacing, 3.84 MHz Channel
40 ^{Bandwidth, PAR = 8.5 dB @ 0.01%}
Probability (CCDF)
30
20
G_ps
10
T_C = −30_C
η_D
IM3
0
25_C
− 10
85_C
25_C _−20
− 30_C
− 30
ACPR
− 40
− 30_C
85_C
25_C _−50
0
1
− 60
10
100 200
P_out, OUTPUT POWER (WATTS) AVG.
Figure 9. 2 - Carrier W - CDMA ACPR, IM3, Power Gain
and Drain Efficiency versus Output Power
17
T_C = −30_C
G_ps
16
25_C
15
85_C
14
70
−30_C 60
25_C ₅₀
85_C
40
13 _{VDD = 28 Vdc}
η_D
30
I_DQ = 610 mA
12 f = 2140 MHz
20
11
10
10
1
0
10
100 200
P_out, OUTPUT POWER (WATTS) CW
Figure 10. Power Gain and Drain Efficiency
versus CW Output Power
MRF6S21060NR1 MRF6S21060NBR1
6
16
I_DQ = 610 mA
f = 2140 MHz
15
14
13
12
32 V
16 V
20 V
24 V
28 V
11 V_DD = 12 V
10
0
20
40
60
80
100
120
P_out, OUTPUT POWER (WATTS) CW
Figure 11. Power Gain versus Output Power
RF Device Data
Freescale Semiconductor