MRF6S21060NR1 Datasheet, PDF (11/18 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

TYPICAL CHARACTERISTICS
0
30
3−Carrier TD−SCDMA
− 10
V_DD = 28 V, I_DQ = 555 mA
f = 2017.5 MHz
25
− 20
η_D
20
− 30
Adj −U _{Adj −L 15}
− 40
10
− 50
Alt − L
5
Alt − U
− 60
0
0 1 2 3 4 5 6 7 89
P_out, OUTPUT POWER (WATTS) AVG.
Figure 18. 3 - Carrier TD - SCDMA ACPR, ALT and
Drain Efficiency versus Output Power
− 18
25
6−Carrier TD−SCDMA
− 26
V_DD = 28 V, I_DQ = 560 mA
f = 2017.5 MHz
η_D
20
− 34
Adj −L
− 42
15
Adj −U
10
Alt − L
− 50
5
Alt − U
− 58
0
0.5 1.5 2.5 3.5 4.5 5.5 6.5 7.5
P_out, OUTPUT POWER (WATTS) AVG.
Figure 19. 6 - Carrier TD - SCDMA ACPR, ALT and
Drain Efficiency versus Output Power
TD - SCDMA TEST SIGNAL
− 30
1.28 MHz
− 30
1.28 MHz
− 40
Channel BW _{VBW = 300 kHz}
− 40
Channel BW
VBW = 300 kHz
Sweep Time = 200 ms
Sweep Time = 200 ms
− 50
RBW = 30 kHz
− 50
RBW = 30 kHz
− 60
− 60
− 70
−ALT2 in
−80 1.28 MHz BW
−3.2 MHz Offset
− 90
+ALT2 in
1.28 MHz BW
+3.2 MHz Offset
− 70
−ALT2 in
−80 1.28 MHz BW
−3.2 MHz Offset
− 90
+ALT2 in
1.28 MHz BW
+3.2 MHz Offset
− 100
− 100
− 110
−ALT1 in
− 120
1.28 MHz BW
−1.6 MHz Offset
− 130
Center 2.0175 GHz
1.5 MHz
+ALT1 in
1.28 MHz BW
+1.6 MHz Offset
Span 15 MHz
f, FREQUENCY (MHz)
Figure 20. 3 - Carrier TD - SCDMA Spectrum
− 110
−ALT1 in
− 120
1.28 MHz BW
−1.6 MHz Offset
− 130
Center 2.0175 GHz
2.5 MHz
+ALT1 in
1.28 MHz BW
+1.6 MHz Offset
Span 25 MHz
f, FREQUENCY (MHz)
Figure 21. 6 - Carrier TD - SCDMA Spectrum
RF Device Data
Freescale Semiconductor
MRF6S21060NR1 MRF6S21060NBR1
11