MRF6S21060NR1 Datasheet, PDF (12/18 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

Z_o = 10 Ω
Z_load
f = 2070 MHz
f = 1950 MHz
f = 2070 MHz
Z_in
f = 1950 MHz
f
MHz
V_DD = 28 Vdc, I_DQ = 560 mA
Z_in
Z_load
W
W
1950
2.227 - j9.127 3.341 - j8.372
1960
2.168 - j8.942 3.239 - j8.218
1970
2.124 - j8.757 3.168 - j8.084
1980
2.073 - j8.606 3.083 - j7.966
1990
2.031 - j8.447 3.009 - j7.865
2000
1.987 - j8.306 2.929 - j7.743
2010
1.940 - j8.155 2.845 - j7.639
2020
1.911 - j8.000 2.775 - j7.529
2030
1.891 - j7.835 2.696 - j7.410
2040
1.856 - j7.711 2.615 - j7.309
2050
1.831 - j7.589 2.549 - j7.207
2060
1.808 - j7.461 2.479 - j7.086
2070
1.782 - j7.325 2.422 - j6.983
Z_in = Device input impedance as measured from
gate to ground.
Z_load = Test circuit impedance as measured
from drain to ground.
Input
Matching
Network
Device
Under Test
Output
Matching
Network
Z _in
Z _load
Figure 22. Series Equivalent Input and Load Impedance — TD - SCDMA
MRF6S21060NR1 MRF6S21060NBR1
12
RF Device Data
Freescale Semiconductor