MRF6S20010NR1 Datasheet, PDF (8/24 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors

W - CDMA TYPICAL CHARACTERISTICS — 2110 -2170 MHz
16
18
15.8
17
15.6
15.4 _{VDD = 28 Vdc, Pout = 1 W (Avg.), IDQ = 130 mA}
15.2 ^{2−Carrier W−CDMA, 10 MHz Carrier Spacing}
3.84 MHz Channel Bandwidth, PAR = 8.5 dB
15 _{@ 0.01% Probability (CCDF)}
16
G_ps
15
η_D
14
− 45
− 10
14.8
− 47
− 12
14.6
IM3 −49
14.4
ACPR _−51
− 14
14.2
− 53
− 16
IRL
14
− 55
− 18
2060 2080 2100 2120 2140 2160 2180 2200 2220
f, FREQUENCY (MHz)
Figure 13. 2 - Carrier W - CDMA Broadband Performance @ P_out = 1 Watt Avg.
49
− 20
V_DD = 28 Vdc, I_DQ = 130 mA
42
f1 = 2165 MHz, f2 = 2175 MHz
2−Carrier W−CDMA, 10 MHz Carrier
− 25
Spacing, 3.84 MHz Channel
35 _{Bandwidth, PAR = 8.5 dB}
− 30
@ 0.01% Probability (CCDF)
28
− 35
η_D
21
− 40
G_ps
T_C = 25_C
14
− 45
IM3
ACPR
7
− 50
0
− 55
0.1
1
10 20
P_out, OUTPUT POWER (WATTS) AVG.
Figure 14. 2 - Carrier W - CDMA ACPR, IM3, Power Gain
and Drain Efficiency versus Output Power
MRF6S20010NR1 MRF6S20010GNR1
8
RF Device Data
Freescale Semiconductor