MRF6S20010NR1 Datasheet, PDF (17/24 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors

Z_o = 25 Ω
f = 2170 MHz
Z_load
f = 2110 MHz
f = 2170 MHz
f = 2110 MHz
Z_source
Z_o = 25 Ω
f = 1990 MHz
Z_load
f = 1930 MHz
f = 1990 MHz
f = 1930 MHz
Z_source
2170 MHz
V_DD = 28 Vdc, I_DQ = 130 mA, P_out = 10 W PEP
f
MHz
Z_source
Ω
Z_load
Ω
2110
2140
3.619 + j0.792 2.544 + j3.068
3.918 + j0.797 2.673 + j3.291
2170 4.087 + j0.558 2.818 + j3.406
1900 MHz
V_DD = 28 Vdc, I_DQ = 130 mA, P_out = 1 W Avg.
f
MHz
Z_source
Ω
Z_load
Ω
1930
1960
9.237 + j1.849 2.770 + j3.497
9.521 + j2.144 2.754 + j3.668
1990 9.889 + j2.434 2.772 + j3.833
Z_o = 25 Ω
f = 1880 MHz
Z_load
f = 1805 MHz
f = 1805 MHz ^Zsource
f = 1880 MHz
Input
Matching
Network
Device
Under
Test
1800 MHz
V_DD = 28 Vdc, I_DQ = 130 mA, P_out = 4 W Avg.
f
MHz
Z_source
Ω
Z_load
Ω
1805 13.237 + j5.810 2.445 + j3.698
1840 13.953 + j6.084 2.542 + j3.942
1880 14.858 + j6.279 2.695 + j4.170
Z_source = Test circuit impedance as measured from
gate to ground.
Z_load = Test circuit impedance as measured
from drain to ground.
Output
Matching
Network
RF Device Data
Freescale Semiconductor
Z _source
Z _load
Figure 29. Series Equivalent Source and Load Impedance
MRF6S20010NR1 MRF6S20010GNR1
17