MRF6S20010NR1 Datasheet, PDF (7/24 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors

TYPICAL CHARACTERISTICS — 2110 - 2170 MHz
47
P3dB = 41.5 dBm (14.2 W)
Ideal
45
43
P1dB = 40.9 dBm (12.26 W)
41
Actual
39
V_DD = 28 Vdc, I_DQ = 130 mA
37
Pulsed CW, 8 μsec(on), 1 msec(off)
f = 2170 MHz
35
20
22
24
26
28
30
P_in, INPUT POWER (dBm)
Figure 8. Pulse CW Output Power versus
Input Power
18
70
17 ^{TC = −30_C}
G_ps
16
25_C
15
85_C
60
− 30_C
25_C 50
85_C ₄₀
14
30
V_DD = 28 Vdc
η_D
13 ^IDQ ^{= 130 mA}
20
f = 2170 MHz
12
10
11
0
0.1
1
10
30
P_out, OUTPUT POWER (WATTS) CW
Figure 9. Power Gain and Drain Efficiency
versus CW Output Power
16
15
14
13
28 V
32 V
12
24 V
20 V
11
16 V
V_DD = 12 V
10
I_DQ = 130 mA
f = 2170 MHz
0
3
6
9
12
15
18
21
P_out, OUTPUT POWER (WATTS) CW
Figure 10. Power Gain versus Output Power
27
6
V_DD = 28 Vdc
18 ^Pout ^{= 10 W (PEP)}
S21
3
I_DQ = 130 mA
9
0
0
−3
−9
−6
− 18
−9
− 27
S11
− 12
− 36
− 15
400 800 1200 1600 2000 2400 2800 3200
f, FREQUENCY (MHz)
Figure 11. Broadband Frequency Response
10⁸
10⁷
10⁶
RF Device Data
Freescale Semiconductor
10⁵
90 100 110 120 130 140 150 160 170 180 190 200 210
T_J, JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTTF in hours x ampere²
drain current. Life tests at elevated temperatures have correlated to
better than ±10% of the theoretical prediction for metal failure. Divide
MTTF factor by I_D2 for MTTF in a particular application.
Figure 12. MTTF Factor versus Junction Temperature
MRF6S20010NR1 MRF6S20010GNR1
7