MRF6S20010NR1 Datasheet, PDF (23/24 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors

B
E1
2X
E4
aaa M C A
2X
D3
PIN ONE ID
L1
GAGE
PLANE
D
2X
aaa M C A b1
e
D1
E
A
bbb M C B
DETAIL Y
H
A
A2
c1
2X
E2
E5
D
SEATING
PLANE
E5
ÇÇÇÇÇÇÇÇÇÇ _{PIN 2}
ÇÇÇÇÇÇÇÇÇÇ _D2
E3
EXPOSED
HEATSINK AREA
PIN 1
ÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇ _{PIN 3}
BOTTOM VIEW
CASE 1265A - 02
ISSUE B
TO - 270- 2 GULL
PLASTIC
MRF6S20010GNR1
L
A1
DETAIL Y
NOTES:
1. CONTROLLING DIMENSION: INCH.
2. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M−1994.
3. DATUM PLANE −H− IS LOCATED AT TOP OF LEAD
AND IS COINCIDENT WITH THE LEAD WHERE
THE LEAD EXITS THE PLASTIC BODY AT THE
TOP OF THE PARTING LINE.
4. DIMENSIONS “D1" AND “E1" DO NOT INCLUDE
MOLD PROTRUSION. ALLOWABLE PROTRUSION
IS .006 PER SIDE. DIMENSIONS “D1" AND “E1" DO
INCLUDE MOLD MISMATCH AND ARE DETER−
MINED AT DATUM PLANE −H−.
5. DIMENSION b1 DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE .005 TOTAL IN EXCESS
OF THE b1 DIMENSION AT MAXIMUM MATERIAL
CONDITION.
6. DATUMS −A− AND −B− TO BE DETERMINED AT
DATUM PLANE −H−.
7. DIMENSIONS “D" AND “E2" DO NOT INCLUDE
MOLD PROTRUSION. ALLOWABLE PROTRUSION
IS .003 PER SIDE. DIMENSIONS “D" AND “E2" DO
INCLUDE MOLD MISMATCH AND ARE DETER−
MINED AT DATUM PLANE −D−.
INCHES
MILLIMETERS
DIM MIN MAX MIN MAX
A .078 .082 1.98 2.08
A1 .001 .004 0.02 0.10
A2 .077 .088 1.96 2.24
D .416 .424 10.57 10.77
D1 .378 .382 9.60 9.70
D2 .290 .320 7.37 8.13
D3 .016 .024 0.41 0.61
E .316 .324 8.03 8.23
E1 .238 .242 6.04 6.15
E2 .066 .074 1.68 1.88
E3 .150 .180 3.81 4.57
E4 .058 .066 1.47 1.68
E5 .231 .235 5.87 5.97
L .018 .024 4.90 5.06
L1
.01 BSC
0.25 BSC
b1 .193 .199 4.90 5.06
c1 .007 .011 0.18 0.28
e
2^°
8^°
2^°
8^°
aaa
.004
0.10
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
RF Device Data
Freescale Semiconductor
MRF6S20010NR1 MRF6S20010GNR1
23