MRF6S20010NR1 Datasheet, PDF (6/24 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors

TYPICAL CHARACTERISTICS — 2110 - 2170 MHz
40
η_D
36
IRL
32
28
V_DD = 28 Vdc, P_out = 10 W (PEP)
I_DQ = 130 mA, 100 kHz Tone Spacing
24
20
IMD
16
G_ps
2050
2090
2130
2170
−5
− 10
− 15
− 20
− 25
− 30
− 35
− 40
2210
f, FREQUENCY (MHz)
Figure 3. Two - Tone Wideband Performance
@ P_out = 10 Watts (PEP)
18
17 ^{IDQ = 195 mA}
16
162.5 mA
130 mA
15
97.5 mA
14
13
65 mA
V_DD = 28 Vdc, f = 2170 MHz
12
Two −Tone Measurements
100 kHz Tone Spacing
11
0.1
1
10
30
P_out, OUTPUT POWER (WATTS) PEP
Figure 4. Two - Tone Power Gain versus
Output Power
− 10
V_DD = 28 Vdc, f = 2170 MHz
Two −Tone Measurements
−20 100 kHz Tone Spacing
− 30
I_DQ = 65 mA
195 mA
− 40
162.5 mA
− 50
97.5 mA
130 mA
− 60
0.1
1
10
30
P_out, OUTPUT POWER (WATTS) PEP
Figure 5. Third Order Intermodulation
Distortion versus Output Power
− 10
V_DD = 28 Vdc, I_DQ = 130 mA
−20 ^{f1 = 2170 MHz, f2 = 2170.1 MHz}
Two −Tone Measurements
− 30
3rd Order
− 40
− 50
5th Order
− 60
7th Order
− 70
0.1
1
10
30
P_out, OUTPUT POWER (WATTS) PEP
Figure 6. Intermodulation Distortion Products
versus Output Power
− 30
3rd Order
− 35
− 40
V_DD = 28 Vdc, P_out = 10 W (PEP)
I_DQ = 130 mA, Two −Tone Measurements
(f1 + f2)/2 = Center Frequency of 2170 MHz
− 45
5th Order
− 50
7th Order
− 55
0.1
1
10
100
TWO −TONE SPACING (MHz)
Figure 7. Intermodulation Distortion Products
versus Tone Spacing
MRF6S20010NR1 MRF6S20010GNR1
6
RF Device Data
Freescale Semiconductor