MRF6S20010NR1 Datasheet, PDF (16/24 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors

GSM EDGE TYPICAL CHARACTERISTICS — 1805-1880 MHz
17
50
0
G_ps
16
η_D
15
40
− 10
30
− 20
IRL
14
20
− 30
V_DD = 28 Vdc
I_DQ = 130 mA
13
10
− 40
1800 1810 1820 1830 1840 1850 1860 1870 1880 1890 1900
f, FREQUENCY (MHz)
Figure 25. Power Gain, Input Return Loss and Drain
Efficiency versus Frequency @ P_out = 4 Watts
6
60
V_DD = 28 Vdc
5 I_DQ = 130 mA
50
f = 1840 MHz
4
40
3
η_D
30
2
20
EVM
1
10
0
0
0.1
1
10
P_out, OUTPUT POWER (WATTS) AVG.
Figure 26. Error Vector Magnitude and Drain
Efficiency versus Output Power
− 50
V_DD = 28 Vdc
−55 ^IDQ ^{= 130 mA}
f = 1840 MHz
− 60
− 65
SR @ 400 kHz
− 70
− 75
SR @ 600 kHz
− 80
0.1
1
10
P_out, OUTPUT POWER (WATTS)
Figure 27. Spectral Regrowth at 400 kHz and
600 kHz versus Output Power
GSM EDGE TEST SIGNAL
− 10
Reference Power
− 20
− 30
− 40
VBW = 30 kHz
Sweep Time = 70 ms
RBW = 30 kHz
− 50
− 60
− 70
400 kHz
400 kHz
− 80
600 kHz
− 90
− 100
600 kHz
− 110
Center 1.96 GHz
200 kHz
Span 2 MHz
Figure 28. EDGE Spectrum
MRF6S20010NR1 MRF6S20010GNR1
16
RF Device Data
Freescale Semiconductor