MRF5S9101NR1 Datasheet, PDF (8/20 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors

TYPICAL CHARACTERISTICS - 900 MHz
− 65
V_DD = 28 Vdc
I_DQ = 650 mA
f = 940 MHz
− 70
T_C = 85_C
25_C
− 75
− 30_C
− 80
− 85
0 10 20 30 40 50 60 70 80 90
P_out, OUTPUT POWER (WATTS) AVG.
Figure 12. Spectral Regrowth @ 600 kHz
versus Output Power
1.E+10
1.E+09
1.E+08
1.E+07
90 100 110 120 130 140 150 160 170 180 190 200 210
T_J, JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTTF in hours x ampere²
drain current. Life tests at elevated temperatures have correlated to
better than ±10% of the theoretical prediction for metal failure. Divide
MTTF factor by I_D2 for MTTF in a particular application.
Figure 13. MTTF Factor versus Junction Temperature
GSM TEST SIGNAL
− 10
Reference Power
− 20
− 30
− 40
− 50
− 60
− 70
400 kHz
− 80
600 kHz
− 90
− 100
VBW = 30 kHz
Sweep Time = 70 ms
RBW = 30 kHz
400 kHz
600 kHz
− 110
Center 1.96 GHz
200 kHz
Span 2 MHz
Figure 14. EDGE Spectrum
MRF5S9101NR1 MRF5S9101NBR1
8
RF Device Data
Freescale Semiconductor