MRF5S9101NR1 Datasheet, PDF (11/20 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors

TYPICAL CHARACTERISTICS - 800 MHz
20
65
19
60
18 ^Gps
55
17 _ηD
50
16
45
15 IRL
V_DD = 26 Vdc
I_DQ = 700 mA
− 10
14
− 12
13
− 14
12
− 16
11
− 18
10
− 20
820 830 840 850 860 870 880 890 900 910 920 930 940
f, FREQUENCY (MHz)
Figure 17. Power Gain, Input Return Loss and Drain
Efficiency versus Frequency @ P_out = 100 W CW
20
45
19
40
G_ps
18
35
17 ^ηD
30
16
25
15
V_DD = 26 Vdc
I_DQ = 700 mA
− 10
14
− 12
IRL
13
− 14
12
− 16
11
− 18
10
− 20
820 830 840 850 860 870 880 890 900 910 920 930 940
f, FREQUENCY (MHz)
Figure 18. Power Gain, Input Return Loss and Drain
Efficiency versus Frequency @ P_out = 40 W CW
3.5
3
2.5
P_out = 50 W Avg.
2
40 W Avg.
1.5
25 W Avg.
1
0.5
V_DD = 28 Vdc
I_DQ = 650 mA
0
850
860
870
880
890
900 910
f, FREQUENCY (MHz)
Figure 19. Error Vector Magnitude versus
Frequency
9
V_DD = 28 Vdc
8 ^IDQ ^{= 650 mA}
f = 880 MHz
6
5
3
2
60
50
40
η
30
T_C = 25_C
20
EVM
10
0
0
1
10
100
P_out, OUTPUT POWER (WATTS) AVG.
Figure 20. Error Vector Magnitude and Drain
Efficiency versus Output Power
RF Device Data
Freescale Semiconductor
MRF5S9101NR1 MRF5S9101NBR1
11