MRF5S9101NR1 Datasheet, PDF (3/20 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors

Table 5. Electrical Characteristics (T_C = 25°C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Typical GSM EDGE Performances (In Freescale GSM EDGE Test Fixture, 50 οhm system) V_DD = 28 Vdc, P_out = 50 W Avg.,
I_DQ = 650 mA, 869 - 894 MHz, 920 - 960 MHz EDGE Modulation
Power Gain
G_ps
—
18
—
Drain Efficiency
η_D
—
42
—
Error Vector Magnitude
EVM
—
2.3
—
Spectral Regrowth at 400 kHz Offset
SR1
—
- 63
—
Spectral Regrowth at 600 kHz Offset
SR2
—
- 78
—
Unit
dB
%
% rms
dBc
dBc
RF Device Data
Freescale Semiconductor
MRF5S9101NR1 MRF5S9101NBR1
3