MRF5S9101NR1 Datasheet, PDF (2/20 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors

Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22 - A114)
1C (Minimum)
Machine Model (per EIA/JESD22 - A115)
A (Minimum)
Charge Device Model (per JESD22 - C101)
IV (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Per JESD 22 - A113, IPC/JEDEC J - STD - 020
3
260
Table 5. Electrical Characteristics (T_C = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Zero Gate Voltage Drain Leakage Current
(V_DS = 68 Vdc, V_GS = 0 Vdc)
I_DSS
—
—
10
Zero Gate Voltage Drain Leakage Current
(V_DS = 26 Vdc, V_GS = 0 Vdc)
I_DSS
—
—
1
Gate - Source Leakage Current
(V_GS = 5 Vdc, V_DS = 0 Vdc)
I_GSS
—
—
1
On Characteristics
Gate Threshold Voltage
(V_DS = 10 Vdc, I_D = 400 μAdc)
V_GS(th)
2
2.8
3.5
Gate Quiescent Voltage
(V_DS = 26 Vdc, I_D = 700 mAdc)
V_GS(Q)
—
3.7
—
Drain - Source On - Voltage
(V_GS = 10 Vdc, I_D = 2 Adc)
V_DS(on)
—
0.21
0.3
Forward Transconductance
(V_DS = 10 Vdc, I_D = 6 Adc)
g_fs
—
7
—
Dynamic Characteristics ⁽¹⁾
Output Capacitance
(V_DS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, V_GS = 0 Vdc)
C_oss
—
70
—
Reverse Transfer Capacitance
(V_DS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, V_GS = 0 Vdc)
C_rss
—
2.2
—
Functional Tests (In Freescale Test Fixture, 50 ohm system) V_DD = 26 Vdc, P_out = 100 W, I_DQ = 700 mA, f = 960 MHz
Power Gain
G_ps
16
17.5
19
Drain Efficiency
η_D
56
60
—
Input Return Loss
IRL
—
- 15
-9
P_out @ 1 dB Compression Point, CW
1. Part internally input matched.
P1dB
100
110
—
Unit
°C
Unit
μAdc
μAdc
μAdc
Vdc
Vdc
Vdc
S
pF
pF
dB
%
dB
W
(continued)
MRF5S9101NR1 MRF5S9101NBR1
2
RF Device Data
Freescale Semiconductor