MRF5S9101NR1 Datasheet, PDF (6/20 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors

TYPICAL CHARACTERISTICS - 900 MHz
18
70
17 ^Gps
60
16
η_D
50
15
40
14
V_DD = 26 Vdc
I_DQ = 700 mA
30
13
0
12
− 15
IRL
11
− 30
10
− 45
860 880 900 920 940 960 980 1000 1020
f, FREQUENCY (MHz)
Figure 3. Power Gain, Input Return Loss and Drain
Efficiency versus Frequency @ P_out = 100 Watts CW
19
50
18
45
G_ps
17
40
16
35
15
η_D
30
14
V_DD = 26 Vdc
I_DQ = 700 mA
−8
13
− 12
IRL
12
− 16
11
− 20
10
− 24
860 880 900 920 940 960 980 1000 1020
f, FREQUENCY (MHz)
Figure 4. Power Gain, Input Return Loss and Drain
Efficiency versus Frequency @ P_out = 40 Watts CW
19
I_DQ = 1500 mA
18
17 _{700 mA}
16 _{500 mA}
15
1300 mA
1100 mA
900 mA
V_DD = 26 Vdc
f = 940 MHz
300 mA
14
1
10
100
1000
P_out, OUTPUT POWER (WATTS)
Figure 5. Power Gain versus Output Power
19
V_DD = 12 V
18
17
16
32 V
15
20 V
24 V ^{28 V}
16 V
14
0 20 40 60 80 100 120 140 160 180 200
P_out, OUTPUT POWER (WATTS) CW
Figure 6. Power Gain versus Output Power
MRF5S9101NR1 MRF5S9101NBR1
6
RF Device Data
Freescale Semiconductor