MRF5S9101NR1 Datasheet, PDF (7/20 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors

TYPICAL CHARACTERISTICS - 900 MHz
20
G_ps
19
T_C = −30_C
18
25_C
17
70
T_C = −30_C
25_C
60
85_C
50
40
85_C
16
30
η_D
15
20
V_DD = 26 Vdc
14
I_DQ = 700 mA ¹⁰
f = 940 MHz
13
0
1
10
100
1000
P_out, OUTPUT POWER (WATTS) CW
Figure 7. Power Gain and Drain Efficiency
versus CW Output Power
3.5
3
V_DD = 28 Vdc
I_DQ = 650 mA
2.5
P_out = 50 W Avg.
2
40 W Avg.
1.5
25 W Avg.
1
0.5
0
900 910 920 930 940 950 960 970 980
f, FREQUENCY (MHz)
Figure 8. Error Vector Magnitude versus
Frequency
9
60
V_DD = 28 Vdc
8 _{IDQ = 650 mA}
50
f = 940 MHz
6
40
5
30
η_D
T_C = 85_C
3
25_C
20
EVM
− 30_C
2
10
0
0
1
10
100
P_out, OUTPUT POWER (WATTS) AVG.
Figure 9. Error Vector Magnitude and Drain
Efficiency versus Output Power
−63 ^{SR @ 400 kHz}
P_out = 50 W Avg.
− 68
25 W Avg.
− 73
SR @ 600 kHz
25 W Avg.
− 78
40 W Avg.
40 W Avg.
V_DD = 28 Vdc
I_DQ = 650 mA
f = 940 MHz
− 83
50 W Avg.
900 910 920 930 940 950 960 970 980
f, FREQUENCY (MHz)
Figure 10. Spectral Regrowth at 400 kHz and
600 kHz versus Frequency
RF Device Data
Freescale Semiconductor
− 45
V_DD = 28 Vdc
−50 I_DQ = 650 mA
f = 940 MHz
− 55
− 60
− 65
T_C = 85_C
25_C
− 30_C
− 70
− 75
− 80
0 10 20 30 40 50 60 70 80 90
P_out, OUTPUT POWER (WATTS) AVG.
Figure 11. Spectral Regrowth at 400 kHz
versus Output Power
MRF5S9101NR1 MRF5S9101NBR1
7