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33887 Datasheet, PDF (8/37 Pages) Freescale Semiconductor, Inc – 5.0 A H-Bridge with Load Current Feedback
ELECTRICAL CHARACTERISTICS
MAXIMUM RATINGS
MAXIMUM RATINGS (continued)
All voltages are with respect to ground unless otherwise noted.
Rating
Symbol
THERMAL RESISTANCE (AND PACKAGE DISSIPATION) RATINGS (9), (10), (11), (12)
Junction-to-Board (Bottom Exposed Pad Soldered to Board)
HSOP (6.0 W)
PQFN (4.0 W)
SOICW-EP (2.0 W)
RθJB
Junction-to-Ambient, Natural Convection, Single-Layer Board (1s) (13)
HSOP (6.0 W)
PQFN (4.0 W)
SOICW-EP (2.0 W)
RθJA
Junction-to-Ambient, Natural Convection, Four-Layer Board (2s2p)
(14)
RθJMA
Value
~7.0
~8.0
~9.0
~ 41
~ 50
~ 62
Unit
°C/W
°C/W
°C/W
HSOP (6.0 W)
PQFN (4.0 W)
SOICW-EP (2.0 W)
Junction-to-Case (Exposed Pad) (15)
HSOP (6.0 W)
PQFN (4.0 W)
SOICW-EP (2.0 W)
RθJC
~ 18
~ 21
~ 23
~ 0.8
~1.2
~2.0
°C/W
Notes
9 The limiting factor is junction temperature, taking into account the power dissipation, thermal resistance, and heat sinking.
10 Exposed heatsink pad plus the power and ground pins comprise the main heat conduction paths. The actual RθJB (junction-to-PC board)
values will vary depending on solder thickness and composition and copper trace thickness. Maximum current at maximum die
temperature represents ~ 16 W of conduction loss heating in the diagonal pair of output MOSFETs. Therefore, the RθJC-total must be
less than 5.0 °C/W for maximum load at 70°C ambient. Module thermal design must be planned accordingly.
11 Thermal resistance between the die and the printed circuit board per JEDEC JESD51-8. Board temperature is measured on the top
surface of the board near the package.
12 Junction temperature is a function of on-chip power dissipation, package thermal resistance, mounting site (board) temperature, ambient
temperature, air flow, power dissipation of other components on the board, and board thermal resistance.
13 Per SEMI G38-87 and JEDEC JESD51-2 with the single-layer board (JESD51-3) horizontal.
14 Per JEDEC JESD51-6 with the board horizontal.
15 Indicates the maximum thermal resistance between the die and the exposed pad surface as measured by the cold plate method (MIL
SPEC-883 Method 1012.1) with the cold plate temperature used for the case temperature.
33887
8
Analog Integrated Circuit Device Data
Freescale Semiconductor