33887 Datasheet, PDF (10/37 Pages) Freescale Semiconductor, Inc – 5.0 A H-Bridge with Load Current Feedback

ELECTRICAL CHARACTERISTICS
STATIC ELECTRICAL CHARACTERISTICS
Table 4. STATIC ELECTRICAL CHARACTERISTICS
Characteristics noted under conditions 5.0 V ≤ V+ ≤ 28 V and -40°C ≤ T_A ≤ 125°C unless otherwise noted. Typical values
noted reflect the approximate parameter mean at T_A = 25°C under nominal conditions unless otherwise noted.
Characteristic
Symbol
Min
Typ
Max
Unit
POWER SUPPLY
POWER OUTPUTS (OUT1, OUT2)
Output ON-Resistance ⁽¹⁸⁾
5.0 V ≤ V+ ≤ 28 V, T_J = 25°C
8.0 V ≤ V+ ≤ 28 V, T_J = 150°C
5.0 V ≤ V+ ≤ 8.0 V, T_J = 150°C
R_DS(ON)
mΩ
–
120
–
–
–
225
–
–
300
Active Current Limiting Threshold (via Internal Constant OFF-Time
PWM) on Low-Side MOSFETs ⁽¹⁹⁾
I_LIM
5.2
6.5
7.8
A
High-Side Short Circuit Detection Threshold
Low-Side Short Circuit Detection Threshold
Leakage Current ⁽²⁰⁾
V_OUT = V+
V_OUT = Ground
I_SCH
I_SCL
I_OUT(LEAK)
11
–
–
A
8.0
–
–
A
µA
–
100
200
–
30
60
Output MOSFET Body Diode Forward Voltage Drop
I_OUT = 3.0 A
V_F
V
–
–
2.0
Overtemperature Shutdown
Thermal Limit
Hysteresis
HIGH-SIDE CURRENT SENSE FEEDBACK
T_LIM
T_HYS
°C
175
–
225
10
–
30
Feedback Current
I_OUT = 0 mA
I_OUT = 500 mA
I_OUT = 1.5 A
I_OUT = 3.0 A
I_OUT = 6.0 A
FAULT STATUS ⁽²¹⁾
Fault Status Leakage Current ⁽²²⁾
V _FS = 5.0 V
Fault Status SET Voltage ⁽²³⁾
I _FS = 300 µA
I _FB
I _FS(LEAK)
V _FS(LOW)
–
–
600
µA
1.07
1.33
1.68
mA
3.6
4.0
4.62
mA
7.2
8.0
9.24
mA
14.4
16
18.48
mA
µA
–
–
10
V
–
–
1.0
Notes
18 Output-ON resistance as measured from output to V+ and ground.
19 Active current limitation applies only for the low-side MOSFETs.
20 Outputs switched OFF with D1 or D2.
21 Fault Status output is an open Drain output requiring a pull-up resistor to 5.0 V.
22 Fault Status Leakage Current is measured with Fault Status HIGH and not SET.
23 Fault Status Set Voltage is measured with Fault Status LOW and SET with I_FS = 300 µA.
33887
10
Analog Integrated Circuit Device Data
Freescale Semiconductor