33810_11 Datasheet, PDF (8/37 Pages) Freescale Semiconductor, Inc – Automotive Engine Control IC Quad injector driver with Parallel/SPI control

ELECTRICAL CHARACTERISTICS
STATIC ELECTRICAL CHARACTERISTICS
Table 3. Static Electrical Characteristics
Characteristics noted under conditions of 3.0 V ≤ VDD ≤ 5.5 V, 6.0 V ≤ VPWR ≤ 32 V, -40°C ≤ TC ≤ 125°C, and calibrated
timers, unless otherwise noted. Where typical values reflect the parameter’s approx. average value with VPWR = 13 V, TA =
25°C.
Characteristic
Symbol
Min
Typ
Max
Unit
INJECTOR DRIVER OUTPUTS (OUT 0:3) (Continued)
Output Clamp Voltage 1
I_D = 20 mA
V_OC1
V
48
53
58
Output Leakage Current
I_{OUT (LKG)}
VDD = 5.0 V, V_DRAIN = 24 V, Open Load Detection Current Disabled
–
VDD = 5.0 V, V_DRAIN = V_OC - 1.0 V, Open Load Detection Current Disabled
–
VDD = 0 V, V_DRAIN = 24 V, Sleep State
–
μA
–
20
–
3000
–
10
Over-temperature Shutdown⁽¹⁰⁾
Over-temperature Shutdown Hysteresis⁽¹⁰⁾
T_LIM
155
–
185
°C
T_{LIM (HYS)}
5.0
10
15
°C
IGNITION (IGBT) GATE DRIVER PARAMETERS (GD 0:3 FB0:3)
Gate Driver Output Voltage
I_GD = 500 μA
I_GD = -500 μA
V _{GS (ON)}
4.8
7.0
9.0
V
V _{GS (OFF)}
0
0.375
0.5
Sleep Mode Gate to Source Resistor
Sleep Mode FBx pin Leakage Current
VDD = 0 V, V_FBx = 24 V,
R _GS(PULLDOWN
100
200
300
KΩ
)
I_{FBX (LKG)}
–
μA
–
1.0
Feedback Sense Current (FBx Input Current)
FBx = 32 V, Outputs Programmed OFF
I_FBX(FLT-SNS)
μA
1.0
Gate Drive Source Current (1 ≤ V_GD ≤ 3)
Gate Drive Turn Off Resistance
I _GATEDRIVE
650
R_DS(ON)
500
780
950
μA
Ω
–
1000
SOFT SHUTDOWN FUNCTION (VOLTAGES REFERENCED TO IGBT COLLECTOR)
Low Voltage Flyback Clamp
Driver Command Off, Soft Shutdown Enabled, GDx = 2.0 V
V_LVC
Spark Duration Comparator Threshold (referenced to IC Ground Tab)
Rising Edge Relative to VPWR
Spark Duration Comparator Threshold (referenced to IC Ground Tab)⁽¹¹⁾
Falling Edge Relative to VPWR, Default = 5.5 V Assuming ideal external
10:1 voltage divider. Voltage measured at high end of divider, not at pin.
Tolerance of divider not included
Open Secondary Comparator Threshold (referenced from primary to
Rising Edge Relative to GND. No hysteresis with 10:1 voltage divider.
CURRENT SENSE COMPARATOR (RSP, RSN)
NOMI Trip Threshold Accuracy - Steady State Condition
3.0 A across 0.02 Ω (RSP - RSN = 60 mV)
10.75 A across 0.04 Ω (RSP - RSN = 430 mV)
V_TH-RISE
V_TH-FALL
V_TH-RISE
NOMI_TRIPTA
VPWR
+9.0
VPWR VPWR + 13 V
+11
V
18
21
24
1.2
2.75
3.6
V
4.9
5.5
6.1
7.4
8.2
9.1
9.9
11.00
12.1
V
11.5
–
15.5
%
-10
–
10
33810
8
Analog Integrated Circuit Device Data
Freescale Semiconductor