MRF7S18125BHR3 Datasheet, PDF (7/14 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors

TYPICAL CHARACTERISTICS
60
P6dB = 52.59 dBm (181.6 W)
59
Ideal
58
P3dB = 52.16 dBm (164.4 W)
57
56
55
54 P1dB = 51.61 dBm
53 ^{(145 W)}
Actual
52
51
V_DD = 28 Vdc, I_DQ = 1100 mA, Pulsed CW
12 μsec(on), 1% Duty Cycle, f = 1960 MHz
50
33 34 35 36 37 38 39 40 41 42 43
P_in, INPUT POWER (dBm)
Figure 7. Pulsed CW Output Power versus
Input Power
18
17.5
17
16.5
G_ps
16
T_C = −30_C
25_C
85_C
65
−30_C
60
25_C
55
85_C ₅₀
45
15.5
40
15
35
14.5
30
14
η_D
13.5
13
10
V_DD = 28 Vdc
I_DQ = 1100 mA
f = 1960 MHz
100
25
20
15
300
P_out, OUTPUT POWER (WATTS) CW
Figure 8. Power Gain and Drain Efficiency
versus Output Power
6
V_DD = 28 Vdc
5 ^{IDQ = 1100 mA}
EDGE Modulation
4
P_out = 78 W Avg.
3
50 W Avg.
2
18 W Avg.
1
0
1930 1940 1950 1960 1970 1980 1990
f, FREQUENCY (MHz)
Figure 9. EVM versus Frequency
−35
−40
−45
25_C
−50
85_C
−55
T_C = −30_C
−60
−65
V_DD = 28 Vdc
I_DQ = 1100 mA
−70
f = 1960 MHz
EDGE Modulation
−75
0 20 40 60 80 100 120 140 160 180 200
P_out, OUTPUT POWER (WATTS)
Figure 11. Spectral Regrowth at 400 kHz
versus Output Power
−50
−55
SR @ 400 kHz
−60
P_out = 78 W Avg.
50 W Avg.
V_DD = 28 Vdc
I_DQ = 1100 mA
EDGE Modulation
−65
78 W Avg.
−70
−75 ^{SR @ 600 kHz}
50 W Avg.
18 W Avg.
18 W Avg.
−80
1930 1940 1950 1960 1970 1980 1990
f, FREQUENCY (MHz)
Figure 10. Spectral Regrowth at 400 kHz and
600 kHz versus Frequency
−45
−50
25_C
−55
−60
85_C
−65
T_C = −30_C
−70
−75
−80
V_DD = 28 Vdc, I_DQ = 1100 mA
f = 1960 MHz, EDGE Modulation
−85
0 20 40 60 80 100 120 140 160 180 200
P_out, OUTPUT POWER (WATTS)
Figure 12. Spectral Regrowth at 600 kHz
versus Output Power
RF Device Data
Freescale Semiconductor
MRF7S18125BHR3 MRF7S18125BHSR3
7