MRF7S18125BHR3 Datasheet, PDF (1/14 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors

Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for GSM and GSM EDGE base station applications with
frequencies from 1800 to 2000 MHz. Can be used in Class AB and Class C for
all typical cellular base station modulations.
GSM Application
• Typical GSM Performance: V_DD = 28 Volts, I_DQ = 1100 mA, P_out =
125 Watts CW, f = 1930 MHz.
Power Gain — 16.5 dB
Drain Efficiency — 55%
GSM EDGE Application
• Typical GSM EDGE Performance: V_DD = 28 Volts, I_DQ = 1100 mA,
P_out = 57 Watts Avg., Full Frequency Band (1930 - 1990 MHz).
Power Gain — 17 dB
Drain Efficiency — 39%
Spectral Regrowth @ 400 kHz Offset = - 60 dBc
Spectral Regrowth @ 600 kHz Offset = - 74 dBc
EVM — 2.6% rms
• Capable of Handling 5:1 VSWR, @ 28 Vdc, 1960 MHz, 125 Watts CW
Output Power
• Typical P_out @ 1 dB Compression Point ] 140 Watts CW
Features
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Internally Matched for Ease of Use
• Integrated ESD Protection
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Document Number: MRF7S18125BH
Rev. 0, 11/2008
MRF7S18125BHR3
MRF7S18125BHSR3
1930- 1990 MHz, 125 W CW, 28 V
GSM, GSM EDGE
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465 - 06, STYLE 1
NI - 780
MRF7S18125BHR3
CASE 465A - 06, STYLE 1
NI - 780S
MRF7S18125BHSR3
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain- Source Voltage
Gate- Source Voltage
Operating Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature ^(1,2)
V_DSS
- 0.5, +65
Vdc
V_GS
- 6.0, +10
Vdc
V_DD
32, +0
Vdc
T_stg
- 65 to +150
°C
T_C
150
°C
T_J
225
°C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value ^(2,3)
Unit
Thermal Resistance, Junction to Case
Case Temperature 81°C, 125 W CW
Case Temperature 81°C, 71 W CW
R_θJC
0.31
0.35
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
© Freescale Semiconductor, Inc., 2008. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF7S18125BHR3 MRF7S18125BHSR3
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