MRF7S18125BHR3 Datasheet, PDF (10/14 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors

Z_o = 5 Ω
f = 2040 MHz
f = 2040 MHz
Z_load
f = 1880 MHz
Z_source
f = 1880 MHz
V_DD = 28 Vdc, I_DQ = 1100 mA, P_out = 125 W CW
f
MHz
Z_source
W
Z_load
W
1880
1.31 - j3.61
1.32 - j3.06
1900
1.25 - j3.06
1.30 - j2.92
1920
1.21 - j3.30
1.28 - j2.79
1940
1.17 - j3.17
1.26 - j2.67
1960
1.13 - j3.06
1.23 - j2.55
1980
1.10 - j2.92
1.20 - j2.42
2000
1.06 - j2.83
1.18 - j2.30
2020
0.99 - j2.75
1.16 - j2.18
2040
0.91 - j2.66
1.12 - j2.07
Z_source = Test circuit impedance as measured from
gate to ground.
Z_load = Test circuit impedance as measured
from drain to ground.
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
Z _source
Z _load
Figure 17. Series Equivalent Source and Load Impedance
MRF7S18125BHR3 MRF7S18125BHSR3
10
RF Device Data
Freescale Semiconductor