MRF7S18125BHR3 Datasheet, PDF(3/14 Page) Freescale Semiconductor, Inc

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MRF7S18125BHR3 Datasheet, PDF (3/14 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors

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Table 4. Electrical Characteristics (TC = 25Â°C unless otherwise noted) (continued)

Characteristic

Symbol

Min

Typ

Max

Unit

Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1100 mA, 1930 - 1990 MHz Bandwidth

Pout @ 1 dB Compression Point

P1dB

140

IMD Symmetry @ 125 W PEP, Pout where IMD Third Order

Intermodulation ` 30 dBc

IMDsym

(Delta IMD Third Order Intermodulation between Upper and Lower

Sidebands > 2 dB)

MHz

VBW Resonance Point

(IMD Third Order Intermodulation Inflection Point)

VBWres

MHz

Gain Flatness in 60 MHz Bandwidth @ Pout = 125 W CW

Average Deviation from Linear Phase in 60 MHz Bandwidth

@ Pout = 125 W CW

Average Group Delay @ Pout = 125 W CW, f = 1960 MHz

Part - to - Part Insertion Phase Variation @ Pout = 125 W CW,

f = 1960 MHz, Six Sigma Window

1.02

Î¦

3.3

Â°

Delay

2.49

ÎÎ¦

6.7

Â°

Gain Variation over Temperature

( - 30Â°C to +85Â°C)

ÎG

0.016

dB/Â°C

Output Power Variation over Temperature

( - 30Â°C to +85Â°C)

ÎP1dB

0.01

dBm/Â°C

Typical GSM EDGE Performances (In Freescale GSM EDGE Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1100 mA, Pout = 57 W

Avg., 1930 - 1990 MHz EDGE Modulation

Power Gain

Gps

Drain Efficiency

Î·D

Error Vector Magnitude

EVM

2.6

% rms

Spectral Regrowth at 400 kHz Offset

SR1

- 60

dBc

Spectral Regrowth at 600 kHz Offset

SR2

- 74

dBc

RF Device Data

Freescale Semiconductor

MRF7S18125BHR3 MRF7S18125BHSR3

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