MRF7S18125BHR3 Datasheet, PDF (6/14 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors

TYPICAL CHARACTERISTICS
18 _{VDD = 28 Vdc}
17.5 ^{Pout = 125 W CW, IDQ = 1100 mA}
58
−7
57
−9
17
G_ps
16.5
η_D
16
56
−11
55
−13
54
−15
15.5
53
−17
IRL
15
52
−19
1930 1940 1950 1960 1970 1980 1990
f, FREQUENCY (MHz)
Figure 3. Power Gain, Input Return Loss and Drain
Efficiency versus Frequency @ P_out = 125 Watts CW
17.5
60
−9
17
G_ps
50
−11
16.5
η_D
40
−13
16
V_DD = 28 Vdc, P_out = 57 W Avg.
I_DQ = 1100 mA, EDGE Modulation
30
−15
IRL
15.5
20
−17
15
10
−19
EVM
14.5
0
−21
1930 1940 1950 1960 1970 1980 1990
f, FREQUENCY (MHz)
Figure 4. Power Gain, Input Return Loss, EVM and Drain
Efficiency versus Frequency @ P_out = 57 Watts Avg.
18
I_DQ = 1650 mA
17
1100 mA
16 825 mA
550 mA
15
1375 mA
14
V_DD = 28 Vdc
f = 1960 MHz
13
10
100
300
P_out, OUTPUT POWER (WATTS) CW
Figure 5. Power Gain versus Output Power
0
V_DD = 28 Vdc, P_out = 125 W (PEP)
−10
I_DQ = 1100 mA, Two−Tone Measurements
(f1 + f2)/2 = Center Frequency of 1960 MHz
−20
IM3−U
−30
IM3−L _IM5−U
−40
IM5−L
IM7−U
−50
IM7−L
−60
0.1
1
10
100
TWO−TONE SPACING (MHz)
Figure 6. Intermodulation Distortion Products
versus Two - Tone Spacing
MRF7S18125BHR3 MRF7S18125BHSR3
6
RF Device Data
Freescale Semiconductor