MRF7S18125BHR3 Datasheet, PDF (2/14 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors

Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22 - A114)
1B (Minimum)
Machine Model (per EIA/JESD22 - A115)
A (Minimum)
Charge Device Model (per JESD22 - C101)
IV (Minimum)
Table 4. Electrical Characteristics (T_C = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(V_DS = 65 Vdc, V_GS = 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V_DS = 28 Vdc, V_GS = 0 Vdc)
Gate- Source Leakage Current
(V_GS = 5 Vdc, V_DS = 0 Vdc)
On Characteristics
Gate Threshold Voltage
(V_DS = 10 Vdc, I_D = 316 μAdc)
Gate Quiescent Voltage
(V_DS = 28 Vdc, I_D = 1100 mAdc)
Fixture Gate Quiescent Voltage ⁽¹⁾
(V_DD = 28 Vdc, I_D = 1100 mAdc, Measured in Functional Test)
Drain- Source On - Voltage
(V_GS = 10 Vdc, I_D = 3.16 Adc)
Dynamic Characteristics ⁽¹⁾
Reverse Transfer Capacitance
(V_DS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, V_GS = 0 Vdc)
Output Capacitance
(V_DS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, V_GS = 0 Vdc)
Input Capacitance
(V_DS = 28 Vdc, V_GS = 0 Vdc ± 30 mV(rms)ac @ 1 MHz)
I_DSS
—
—
10
μAdc
I_DSS
—
—
1
μAdc
I_GSS
—
—
1
μAdc
V_GS(th)
1.2
1.9
2.7
Vdc
V_GS(Q)
—
2.7
—
Vdc
V_GG(Q)
4
5.3
7
Vdc
V_DS(on)
0.1
0.2
0.3
Vdc
C_rss
—
1.15
—
pF
C_oss
—
673
—
pF
C_iss
—
309
—
pF
Functional Tests (In Freescale Test Fixture, 50 ohm system) V_DD = 28 Vdc, I_DQ = 1100 mA, P_out = 125 W CW, f = 1930 MHz
Power Gain
G_ps
15
16.5
18
dB
Drain Efficiency
η_D
51
55
—
%
Input Return Loss
IRL
—
- 12
-7
dB
1. V_GG = 2 x V_GS(Q). Parameter measured on Freescale Test Fixture, due to resistive divider network on the board. Refer to Test Circuit
schematic.
2. Part internally matched both on input and output.
(continued)
MRF7S18125BHR3 MRF7S18125BHSR3
2
RF Device Data
Freescale Semiconductor