MRF6S21060NR1_08 Datasheet, PDF (7/20 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

TYPICAL CHARACTERISTICS
10⁹
10⁸
10⁷
10⁶
10⁵
90 110 130 150 170 190 210 230 250
T_J, JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTTF in hours when the device
is operated at V_DD = 28 Vdc, P_out = 14 W Avg., and η_D = 26%.
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
Figure 12. MTTF Factor versus Junction Temperature
W-CDMA TEST SIGNAL
100
10
1
0.1
0.01
0.001
W-CDMA. ACPR Measured in 3.84 MHz Channel
Bandwidth @ ±5 MHz Offset. IM3 Measured in
3.84 MHz Bandwidth @ ±10 MHz Offset. PAR =
8.5 dB @ 0.01% Probability on CCDF
0.0001
0
2
4
6
8
10
PEAK-T O-A VERAGE (dB)
Figure 13. CCDF W-CDMA 3GPP, Test Model 1,
64 DPCH, 67% Clipping, Single-Carrier Test Signal
+20
3.84 MHz
+30
Channel BW
0
-10
-20
-30
-40
-50
-ACPR in +ACPR in
-60 -IM3 in
3.84 MHz BW 3.84 MHz BW +IM3 in
-70 ^{3.84 MHz BW}
3.84 MHz BW
-80
-25 -2 0 -15 -10 -5 0 5 10 15 20 25
f, FREQUENCY (MHz)
Figure 14. 2‐Carrier W‐CDMA Spectrum
RF Device Data
Freescale Semiconductor
MRF6S21060NR1 MRF6S21060NBR1
7