MRF6S21060NR1_08 Datasheet, PDF (19/20 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process.
Application Notes
• AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
• AN3263: Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over-Molded Plastic Packages
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
4
5
Date
Dec. 2006
Dec. 2008
Description
• Added “TD-SCDMA” to data sheet description, p. 1
• Updated Part Numbers in Table 7, Component Designations and Values, to RoHS compliant part numbers,
p. 4
• Added TD-SCDMA test circuit schematic, component designations and values, component layout, typical
characteristic curves, test signal and series impedance, p. 9-12
• Added Product Documentation and Revision History, p. 17
• Modified data sheet to reflect RF Test Reduction described in Product and Process Change Notification
number, PCN13232, p. 1, 2
• Added Case Operating Temperature limit to the Maximum Ratings table and set limit to 150°C, p. 1
• Operating Junction Temperature increased from 200°C to 225°C in Maximum Ratings table and related
“Continuous use at maximum temperature will affect MTTF” footnote added and changed 220°C to 225°C
in Capable Plastic Package bullet, p. 1
• Corrected V_DS to V_DD in the RF test condition voltage callout for V_GS(Q), and added “Measured in
Functional Test”, On Characteristics table, p. 2
• Updated PCB information to show more specific material details, Figs. 1, 16, Test Circuit Schematic,
p. 3, 9
• Updated Part Numbers in Tables 6, 7, Component Designations and Values, to latest RoHS compliant
part numbers, p. 3, 9
• Removed lower voltage tests from Fig. 11, Power Gain versus Output Power, due to fixed tuned fixture
limitations, p. 6
• Replaced Fig. 12, MTTF versus Junction Temperature with updated graph. Removed Amps² and listed
operating characteristics and location of MTTF calculator for device, p. 7
• Replaced Case Outline 1486-03, Issue C, with 1486-03, Issue D, p. 13-15. Added pin numbers 1 through
4 on Sheet 1.
• Replaced Case Outline 1484-04, Issue D, with 1484-04, Issue E, p. 16-18. Added pin numbers 1 through
4 on Sheet 1, replacing Gate and Drain notations with Pin 1 and Pin 2 designations.
RF Device Data
Freescale Semiconductor
MRF6S21060NR1 MRF6S21060NBR1
19