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MRF6S21060NR1_08 Datasheet, PDF (1/20 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs | |||
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Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETs
Designed for W-CDMA base station applications with frequencies from 2110
to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier
applications. To be used in Class AB for PCN- PCS/cellular radio, WLL and
TD-SCDMA applications.
⢠Typical 2-Carrier W-CDMA Performance: VDD = 28 Volts, IDQ = 610 mA,
Pout = 14 Watts Avg., f = 2115.5 MHz, Channel Bandwidth = 3.84 MHz,
PAR = 8.5 dB @ 0.01% Probability on CCDF.
Ä
Power Gain â 15.5 dB
Ä
Drain Efficiency â 26%
Ä
IM3 @ 10 MHz Offset â -37 dBc in 3.84 MHz Bandwidth
Ä
ACPR @ 5 MHz Offset â -40 dBc in 3.84 MHz Bandwidth
⢠Capable of Handling 5:1 VSWR, @ 28 Vdc, 2140 MHz, 60 Watts CW
Output Power
Features
⢠Characterized with Series Equivalent Large-Signal Impedance Parameters
⢠Internally Matched for Ease of Use
⢠Qualified Up to a Maximum of 32 VDD Operation
⢠Integrated ESD Protection
⢠Designed for Lower Memory Effects and Wide Instantaneous Bandwidth
Applications
⢠225_C Capable Plastic Package
⢠N Suffix Indicates Lead-Free Terminations. RoHS Compliant.
⢠In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
Document Number: MRF6S21060N
Rev. 5, 12/2008
MRF6S21060NR1
MRF6S21060NBR1
2110-2170 MHz, 14 W AVG., 28 V
2 x W-CDMA
LATERAL N-CHANNEL
RF POWER MOSFETs
CASE 1486-03, STYLE 1
TO-270 WB-4
PLASTIC
MRF6S21060NR1
CASE 1484-04, STYLE 1
TO-272 WB-4
PLASTIC
MRF6S21060NBR1
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain-Source Voltage
Gate-Source Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature (1,2)
Table 2. Thermal Characteristics
Characteristic
VDSS
VGS
Tstg
TC
TJ
Symbol
-0.5, +68
-0.5, +12
-Ä65 to +150
150
225
Value (2,3)
Vdc
Vdc
°C
°C
°C
Unit
Thermal Resistance, Junction to Case
Case Temperature 79°C, 60 W CW
Case Temperature 76°C, 14 W CW
RθJC
0.89
1.04
°C/W
ÄÄ1. Continuous use at maximum temperature will affect MTTF.
ÄÄ2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
MTTF calculators by product.
ÄÄ3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
© Freescale Semiconductor, Inc., 2005-2006, 2008. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF6S21060NR1 MRF6S21060NBR1
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