MRF6S21060NR1_08 Datasheet, PDF (5/20 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

TYPICAL CHARACTERISTICS
16
28
15.8
η_D
27
15.6
V_DD = 28 Vdc, P_out = 14 W (Avg.)
15.4 I_DQ = 610 mA, 2-Carrier W-CDMA
15.2
10 MHz Carrier Spacing, 3.84 MHz
Channel Bandwidth, PAR = 8.5 dB
15 ^{@ 0.01% Probability (CCDF)}
26
25
G_ps
24
-36
14.8
IM3
-38
-5
14.6
-40
-10
14.4
-42
-15
14.2
IRL
ACPR
-44
-20
14
-46
-25
2060 2080 2100 2120 2140 2160 2180 2200 2220
f, FREQUENCY (MHz)
Figure 3. 2-Carrier W-CDMA Broadband Performance @ P_out = 14 Watts Avg.
15.6
G_ps
15.4
39
η_D ³⁸
15.2
V_DD = 28 Vdc, P_out = 28 W (Avg.)
15 I_DQ = 610 mA, 2-Carrier W-CDMA
10 MHz Carrier Spacing, 3.84 MHz
14.8 Channel Bandwidth, PAR = 8.5 dB
@ 0.01% Probability (CCDF)
14.6
IM3
14.4
IRL
37
36
-26
-6
-28
-9
-12
-30
-15
14.2
ACPR
-32
-18
-21
14
-34
-24
2060 2080 2100 2120 2140 2160 2180 2200 2220
f, FREQUENCY (MHz)
Figure 4. 2-Carrier W-CDMA Broadband Performance @ P_out = 28 Watts Avg.
17
16
763 mA
610 mA
15
458 mA
14
305 mA
13
I_DQ = 915 mA
12 _{VDD = 28 Vdc, f1 = 2135 MHz, f2 = 2145 MHz}
Two-Tone Measurements, 10 MHz Tone Spacing
11
1
10
100 200
P_out, OUTPUT POWER (WATTS) PEP
Figure 5. Two-T one Power Gain versus
Output Power
-1 0
V_DD = 28 Vdc, f1 = 2135 MHz, f2 = 2145 MHz
Two-Tone Measurements, 10 MHz Tone Spacing
-2 0
-3 0
915 mA
I_DQ = 305 mA
-4 0
-5 0
458 mA
763 mA
610 mA
-60
1
10
100 200
P_out, OUTPUT POWER (WATTS) PEP
Figure 6. Third Order Intermodulation Distortion
versus Output Power
RF Device Data
Freescale Semiconductor
MRF6S21060NR1 MRF6S21060NBR1
5