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MRF6S21060NR1_08 Datasheet, PDF (11/20 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
TYPICAL CHARACTERISTICS
0
30
3-Carrier TD-SCDMA
-1 0
VDD = 28 V, IDQ = 555 mA
f = 2017.5 MHz
25
-2 0
ηD
20
-3 0
Adj-U Adj-L 15
-4 0
10
-5 0
Alt-L
5
Alt-U
-60
0
0 1 2 3 4 5 6 7 89
Pout, OUTPUT POWER (WATTS) AVG.
Figure 18. 3-Carrier TD-SCDMA ACPR, ALT and
Drain Efficiency versus Output Power
-1 8
25
6-Carrier TD-SCDMA
VDD = 28 V, IDQ = 560 mA
-2 6 f = 2017.5 MHz
ηD
20
-3 4
Adj-L
-4 2
15
Adj-U
10
Alt-L
-5 0
5
Alt-U
-58
0
0.5 1.5 2.5 3.5 4.5 5.5 6.5 7.5
Pout, OUTPUT POWER (WATTS) AVG.
Figure 19. 6-Carrier TD-SCDMA ACPR, ALT and
Drain Efficiency versus Output Power
TD-SCDMA TEST SIGNAL
-30
1.28 MHz
-30
1.28 MHz
-40
Channel BW
VBW = 300 kHz
-40
Channel BW
VBW = 300 kHz
Sweep Time = 200 ms
Sweep Time = 200 ms
-50
RBW = 30 kHz
-50
RBW = 30 kHz
-60
-60
-70
-AL T2 in
-80 1.28 MHz BW
-3.2 MHz Offset
-90
+ALT2 in
1.28 MHz BW
+3.2 MHz Offset
-70
-AL T2 in
-80 1.28 MHz BW
-3.2 MHz Offset
-90
+ALT2 in
1.28 MHz BW
+3.2 MHz Offset
-100
-100
-1 10
-AL T1 in
-120
1.28 MHz BW
-1.6 MHz Offset
-130
Center 2.0175 GHz
1.5 MHz
+ALT1 in
1.28 MHz BW
+1.6 MHz Offset
Span 15 MHz
f, FREQUENCY (MHz)
Figure 20. 3-Carrier TD-SCDMA Spectrum
-1 10
-AL T1 in
-120
1.28 MHz BW
-1.6 MHz Offset
-130
Center 2.0175 GHz
2.5 MHz
+ALT1 in
1.28 MHz BW
+1.6 MHz Offset
Span 25 MHz
f, FREQUENCY (MHz)
Figure 21. 6-Carrier TD-SCDMA Spectrum
RF Device Data
Freescale Semiconductor
MRF6S21060NR1 MRF6S21060NBR1
11