MRF6S21060NR1_08 Datasheet, PDF (2/20 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22-A114)
1B (Minimum)
Machine Model (per EIA/JESD22-A115)
A (Minimum)
Charge Device Model (per JESD22-C101)
III (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD22-A113, IPC/JEDEC J-STD-020
3
260
°C
Table 5. Electrical Characteristics (T_A = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(V_DS = 68 Vdc, V_GS = 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V_DS = 28 Vdc, V_GS = 0 Vdc)
Gate-Source Leakage Current
(V_GS = 5 Vdc, V_DS = 0 Vdc)
I_DSS
—
—
10
μAdc
I_DSS
—
—
1
μAdc
I_GSS
—
—
1
μAdc
On Characteristics (DC)
Gate Threshold Voltage
(V_DS = 10 Vdc, I_D = 200 μAdc)
V_GS(th)
1.5
2.2
2.5
Vdc
Gate Quiescent Voltage
(V_DD = 28 Vdc, I_D = 610 mAdc, Measured in Functional Test)
V_GS(Q)
2
2.8
4
Vdc
Drain-Source On-Voltage
(V_GS = 10 Vdc, I_D = 2.0 Adc)
V_DS(on)
—
0.3
—
Vdc
Dynamic Characteristics ⁽¹⁾
Reverse Transfer Capacitance
(V_DS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, V_GS = 0 Vdc)
C_rss
—
1.5
—
pF
Functional Tests (In Freescale Test Fixture, 50 ohm system) V_DD = 28 Vdc, I_DQ = 610 mA, P_out = 14 W Avg., f1 = 2115.5 MHz, f2 =
2122.5 MHz, 2-carrier W-CDMA, 3.84 MHz Channel Bandwidth Carriers. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz
Offset. IM3 measured in 3.84 MHz Bandwidth @ ±10 MHz Offset. PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain
G_ps
13.5
15.5
16.5
dB
Drain Efficiency
η_D
24.5
26
—
%
Intermodulation Distortion
IM3
—
-37
-35
dBc
Adjacent Channel Power Ratio
ACPR
—
-40
-38
dBc
Input Return Loss
IRL
—
-14
-10
dB
ăĂ1. Part is internally matched both on input and output.
MRF6S21060NR1 MRF6S21060NBR1
2
RF Device Data
Freescale Semiconductor