MC9S12XS256RMV1 Datasheet, PDF (642/738 Pages) Freescale Semiconductor, Inc – Reference Manual

64 KByte Flash Module (S12XFTMR64K1V1)
Table 20-35. Erase Verify P-Flash Section Command FCCOB Requirements
CCOBIX[2:0]
FCCOB Parameters
000
0x03
Global address [22:16] of
a P-Flash block
001
Global address [15:0] of the first phrase to be verified
010
Number of phrases to be verified
Upon clearing CCIF to launch the Erase Verify P-Flash Section command, the Memory Controller will
verify the selected section of Flash memory is erased. The CCIF flag will set after the Erase Verify P-Flash
Section operation has completed.
Table 20-36. Erase Verify P-Flash Section Command Error Handling
Register
Error Bit
Error Condition
Set if CCOBIX[2:0] != 010 at command launch
ACCERR
Set if command not available in current mode (see Table 20-28)
Set if an invalid global address [22:0] is supplied¹
FSTAT
Set if a misaligned phrase address is supplied (global address [2:0] != 000)
Set if the requested section crosses a 128 Kbyte boundary
FPVIOL None
MGSTAT1 Set if any errors have been encountered during the read²
MGSTAT0 Set if any non-correctable errors have been encountered during the read²
1 _{As defined by the memory map for FTMR128K1.}
2 _{As found in the memory map for FTMR128K1.}
20.4.2.4 Read Once Command
The Read Once command provides read access to a reserved 64 byte field (8 phrases) located in the
nonvolatile information register of P-Flash block 0. The Read Once field is programmed using the
Program Once command described in Section 20.4.2.6. The Read Once command must not be executed
from the Flash block containing the Program Once reserved field to avoid code runaway.
Table 20-37. Read Once Command FCCOB Requirements
CCOBIX[2:0]
000
001
010
011
100
101
FCCOB Parameters
0x04
Not Required
Read Once phrase index (0x0000 - 0x0007)
Read Once word 0 value
Read Once word 1 value
Read Once word 2 value
Read Once word 3 value
S12XS Family Reference Manual, Rev. 1.13
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Freescale Semiconductor