MRF6V2010NR1_08 Datasheet, PDF (6/21 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

TYPICAL CHARACTERISTICS
26
24
22
20
18
50 V
45 V
16
40 V
35 V
14
30 V
25 V
12
V_DD = 20 V
10
0
2
4
6
I_DQ = 30 mA
f = 220 MHz
8
10
12
14
P_out, OUTPUT POWER (WATTS) CW
Figure 9. Power Gain versus Output Power
45
T_C = −30_C
40
25_C
85_C
35
30
V_DD = 50 Vdc
25
I_DQ = 30 mA
f = 220 MHz
20
0
5
10
15
20
25
P_in, INPUT POWER (dBm)
Figure 10. Power Output versus Power Input
26
25
24
T_C = −30_C
23
−30_C
72
25_C
63
G_ps
54
85_C
45
22
36
21 _{85_C}
25_C
η_D
27
20
18
V_DD = 50 Vdc
19
I_DQ = 30 mA
9
f = 220 MHz
18
0
0.1
1
10 20
P_out, OUTPUT POWER (WATTS) CW
Figure 11. Power Gain and Drain Efficiency versus CW Output Power
27
80
G_ps @ 130 MHz
G_ps @ 64 MHz
26
70
G_ps @ 220 MHz
η_D @ 130 MHz
25
60
24
50
23
η_D @ 64 MHz
40
η_D @ 220 MHz
22
η_D @ 450 MHz
30
21
20
20
G_ps @ 450 MHz
19
0
2
4
V_DD = 50 Vdc
10
I_DQ = 30 mA
0
6
8
10
12
P_out, OUTPUT POWER (WATTS) CW
Figure 12. Power Gain and Drain Efficiency
versus CW Output Power
MRF6V2010NR1 MRF6V2010NBR1
6
10⁸
10⁷
10⁶
10⁵
90
110 130
150 170
190 210 230 250
T_J, JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTTF in hours when the device
is operated at V_DD = 50 Vdc, P_out = 10 W CW, and η_D = 62%.
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
Figure 13. MTTF versus Junction Temperature
RF Device Data
Freescale Semiconductor