MRF6V2010NR1_08 Datasheet, PDF (1/21 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed primarily for CW large - signal output and driver applications with
frequencies up to 450 MHz. Devices are unmatched and are suitable for use in
industrial, medical and scientific applications.
• Typical CW Performance at 220 MHz: V_DD = 50 Volts, I_DQ = 30 mA,
P_out = 10 Watts
Power Gain — 23.9 dB
Drain Efficiency — 62%
• Capable of Handling 10:1 VSWR, @ 50 Vdc, 220 MHz, 10 Watts CW
Output Power
Features
• Integrated ESD Protection
• Excellent Thermal Stability
• Facilitates Manual Gain Control, ALC and Modulation Techniques
• 200°C Capable Plastic Package
• RoHS Compliant
• TO - 270 - 2 in Tape and Reel. R1 Suffix = 500 Units per 24 mm,
13 inch Reel.
• TO - 272 - 2 in Tape and Reel. R1 Suffix = 500 Units per 44 mm,
13 inch Reel.
Document Number: MRF6V2010N
Rev. 4, 3/2008
MRF6V2010NR1
MRF6V2010NBR1
10 - 450 MHz, 10 W, 50 V
LATERAL N - CHANNEL
BROADBAND
RF POWER MOSFETs
CASE 1265 - 09, STYLE 1
TO - 270 - 2
PLASTIC
MRF6V2010NR1
CASE 1337 - 04, STYLE 1
TO - 272 - 2
PLASTIC
MRF6V2010NBR1
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain - Source Voltage
Gate - Source Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
V_DSS
- 0.5, +110
Vdc
V_GS
- 0.5, +10
Vdc
T_stg
- 65 to +150
°C
T_C
150
°C
T_J
200
°C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value ^(1,2)
Unit
Thermal Resistance, Junction to Case
Case Temperature 81°C, 10 W CW
R_θJC
3.0
°C/W
1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
MTTF calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
© Freescale Semiconductor, Inc., 2007-2008. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF6V2010NR1 MRF6V2010NBR1
1