MRF6V2010NR1_08 Datasheet, PDF (13/21 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

50 OHM TYPICAL CHARACTERISTICS
Table 10. Common Source S - Parameters (V_DD = 50 V, I_DQ = 30 mA, T_C = 25°C, 50 Ohm System) (continued)
f
MHz
800
S₁₁
|S₁₁|
∠φ
0.858
- 139.7
S₂₁
|S₂₁|
1.697
∠φ
40.2
S₁₂
|S₁₂|
0.00839
∠φ
- 31.1
|S₂₂|
0.932
820
0.861
- 140.7
1.636
38.9
0.00818
- 32.1
0.934
840
0.864
- 141.6
1.578
37.6
0.00798
- 33.1
0.935
860
0.867
- 142.6
1.523
36.4
0.00781
- 33.8
0.936
880
0.870
- 143.5
1.471
35.1
0.00763
- 34.8
0.938
900
0.873
- 144.5
1.421
33.9
0.00745
- 35.9
0.939
S₂₂
∠φ
- 107.6
- 109.0
- 110.4
- 111.7
- 112.9
- 114.1
RF Device Data
Freescale Semiconductor
MRF6V2010NR1 MRF6V2010NBR1
13