MRF6V2010NR1_08 Datasheet, PDF (20/21 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process.
Application Notes
• AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
• AN3263: Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over - Molded Plastic Packages
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
0
1
2
3
4
Date
Feb. 2007
May 2007
Aug. 2007
Feb. 2008
Mar. 2008
Description
• Initial Release of Data Sheet
• Corrected Test Circuit Component part numbers in Table 6, Component Designations and Values for C1,
C8, C11, C18, C4, C13, C5, and C14, p. 3
• Corrected Series Impedance Z_source and Z_load values, Fig. 13, Series Equivalent Source and Load
Impedance, p. 7
• Replaced Case Outline 1265 - 08 with 1265 - 09, Issue K, p. 1, 12 - 14. Corrected cross hatch pattern in
bottom view and changed its dimensions (D2 and E3) to minimum value on source contact (D2 changed
from Min - Max .290 - .320 to .290 Min; E3 changed from Min - Max .150 - .180 to .150 Min). Added JEDEC
Standard Package Number.
• Replaced Case Outline 1337 - 03 with 1337 - 04, p. 1, 15 - 17. Issue D: Removed Drain - ID label from View
Y - Y on Sheet 2. Renamed E2 to E3. Added cross - hatch region dimensions D2 and E2.
• Corrected Test Circuit Component part number in Table 6, Component Designations and Values for R1, p. 3
• Added Figure 12, Power Gain and Drain Efficiency versus CW Output Power, p. 6
• Corrected plot points to show 50 Ohms in Figure 14, Series Equivalent Source and Load Impedance, p. 7
• Added Figures 15 - 17, Test Circuit Component Layout and Tables 7 - 9, Test Circuit Component
Designations and Values to show 130, 450 and 64 MHz, respectively, p. 8 - 10
• Added Figure 18, Series Equivalent Source and Load Impedance to show 64, 130, 220 and 450 MHz plot
points, p. 11
• Added Case Operating Temperature limit to the Maximum Ratings table and set limit to 150°C, p. 1
• Corrected C_iss test condition to indicate AC stimulus on the V_GS connection versus the V_DS connection,
Dynamic Characteristics table, p. 2
• Replaced Case Outline 1337 - 04, Issue D, with 1337 - 04, Issue E, p. 15 - 17. Corrected document number
98ASA99191D on Sheet 3.
• Corrected Z_source (37.5 + j15.1) and Z_load (94.5 + j16.7) 64 MHz values and replotted both, p. 11
• Added S - Parameter table, p. 12, 13
MRF6V2010NR1 MRF6V2010NBR1
20
RF Device Data
Freescale Semiconductor