MRF6V2010NR1_08 Datasheet, PDF(2/21 Page) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

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MRF6V2010NR1_08 Datasheet, PDF (2/21 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

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Table 3. ESD Protection Characteristics

Test Methodology

Class

Human Body Model (per JESD22 - A114)

2 (Minimum)

Machine Model (per EIA/JESD22 - A115)

A (Minimum)

Charge Device Model (per JESD22 - C101)

IV (Minimum)

Table 4. Moisture Sensitivity Level

Test Methodology

Rating

Package Peak Temperature

Per JESD 22 - A113, IPC/JEDEC J - STD - 020

260

Table 5. Electrical Characteristics (TC = 25Â°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Off Characteristics

Gate - Source Leakage Current

(VGS = 5 Vdc, VDS = 0 Vdc)

Drain - Source Breakdown Voltage

(ID = 5 mA, VGS = 0 Vdc)

Zero Gate Voltage Drain Leakage Current

(VDS = 50 Vdc, VGS = 0 Vdc)

Zero Gate Voltage Drain Leakage Current

(VDS = 100 Vdc, VGS = 0 Vdc)

IGSS

V(BR)DSS

110

IDSS

2.5

On Characteristics

Gate Threshold Voltage

(VDS = 10 Vdc, ID = 28 Î¼Adc)

Gate Quiescent Voltage

(VDD = 50 Vdc, ID = 30 mAdc, Measured in Functional Test)

Drain - Source On - Voltage

(VGS = 10 Vdc, ID = 70 mAdc)

VGS(th)

1.68

VGS(Q)

1.5

2.68

3.5

VDS(on)

0.26

Dynamic Characteristics

Reverse Transfer Capacitance

(VDS = 50 Vdc Â± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)

Output Capacitance

(VDS = 50 Vdc Â± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)

Input Capacitance

(VDS = 50 Vdc, VGS = 0 Vdc Â± 30 mV(rms)ac @ 1 MHz)

Crss

0.13

Coss

7.3

Ciss

16.3

Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 50 Vdc, IDQ = 30 mA, Pout = 10 W, f = 220 MHz, CW

Power Gain

Gps

22.5

23.9

25.5

Drain Efficiency

Î·D

Input Return Loss

IRL

- 14

-9

Unit

Â°C

Unit

Î¼Adc

Vdc

Î¼Adc

Vdc

ATTENTION: The MRF6V2010N and MRF6V2010NB are high power devices and special considerations

must be followed in board design and mounting. Incorrect mounting can lead to internal temperatures which

exceed the maximum allowable operating junction temperature. Refer to Freescale Application Note AN3263

(for bolt down mounting) or AN1907 (for solder reflow mounting) PRIOR TO STARTING SYSTEM DESIGN to

ensure proper mounting of these devices.

MRF6V2010NR1 MRF6V2010NBR1

RF Device Data

Freescale Semiconductor

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