MRF6V2010NR1_08 Datasheet, PDF (12/21 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

50 OHM TYPICAL CHARACTERISTICS
Table 10. Common Source S - Parameters (V_DD = 50 V, I_DQ = 30 mA, T_C = 25°C, 50 Ohm System)
f
MHz
10
S₁₁
|S₁₁|
∠φ
0.997
- 5.0
S₂₁
|S₂₁|
11.520
∠φ
175.6
S₁₂
|S₁₂|
0.000790
∠φ
84.6
20
0.994
- 9.5
11.419
171.6
0.00157
84.3
30
0.992
- 14.5
11.356
167.9
0.00232
78.1
40
0.987
- 19.3
11.278
164.1
0.00307
74.6
50
0.981
- 24.0
11.187
160.1
0.00380
71.0
60
0.974
- 28.6
11.042
156.1
0.00449
67.4
70
0.965
- 33.0
10.848
152.1
0.00513
63.8
80
0.955
- 37.4
10.636
148.2
0.00574
60.4
90
0.944
- 41.6
10.405
144.5
0.00631
57.0
100
0.933
- 45.7
10.147
140.8
0.00683
53.8
120
0.912
- 53.3
9.603
134.2
0.00776
47.9
140
0.892
- 60.4
9.061
127.9
0.00851
42.4
160
0.873
- 66.7
8.516
122.2
0.00914
37.6
180
0.856
- 72.7
7.993
116.9
0.00967
32.9
200
0.841
- 78.1
7.497
112.1
0.0101
28.7
220
0.828
- 83.0
7.040
107.5
0.0104
24.9
240
0.819
- 87.5
6.612
103.3
0.0107
21.3
260
0.810
- 91.7
6.214
99.3
0.0109
18.0
280
0.804
- 95.5
5.845
95.7
0.0110
15.0
300
0.799
- 99.0
5.507
92.2
0.0112
11.9
320
0.796
- 102.2
5.192
88.8
0.0112
9.1
340
0.794
- 105.1
4.901
85.7
0.0113
6.5
360
0.793
- 107.8
4.630
82.8
0.0112
4.1
380
0.793
- 110.4
4.382
79.9
0.0112
2.0
400
0.794
- 112.7
4.152
77.2
0.0112
- 0.3
420
0.796
- 114.9
3.937
74.6
0.0112
- 2.5
440
0.798
- 116.9
3.733
72.2
0.0111
- 4.4
460
0.800
- 118.8
3.547
69.8
0.0110
- 6.5
480
0.803
- 120.5
3.372
67.6
0.0109
- 8.5
500
0.807
- 122.2
3.213
65.4
0.0108
- 10.0
520
0.810
- 123.8
3.061
63.3
0.0107
- 11.9
540
0.814
- 125.4
2.919
61.2
0.0105
- 13.5
560
0.817
- 126.8
2.784
59.3
0.0104
- 14.9
580
0.821
- 128.1
2.661
57.5
0.0103
- 16.6
600
0.825
- 129.3
2.545
55.7
0.0101
- 18.1
620
0.829
- 130.5
2.436
53.9
0.00996
- 19.6
640
0.833
- 131.6
2.334
52.2
0.00981
- 21.0
660
0.837
- 132.7
2.237
50.5
0.00963
- 22.4
680
0.840
- 133.8
2.144
48.9
0.00946
- 23.7
700
0.843
- 134.8
2.058
47.3
0.00928
- 25.0
720
0.847
- 135.8
1.977
45.8
0.00910
- 26.1
740
0.850
- 136.8
1.900
44.4
0.00894
- 27.3
760
0.854
- 137.8
1.828
43.0
0.00876
- 28.6
780
0.857
- 138.7
1.760
41.6
0.00859
- 29.7
|S₂₂|
0.960
0.962
0.963
0.964
0.964
0.963
0.961
0.958
0.955
0.951
0.944
0.936
0.929
0.923
0.918
0.914
0.912
0.909
0.908
0.907
0.906
0.906
0.906
0.906
0.906
0.907
0.907
0.908
0.908
0.909
0.910
0.911
0.912
0.914
0.915
0.917
0.918
0.920
0.921
0.923
0.924
0.926
0.928
0.930
S₂₂
∠φ
- 0.8
- 3.5
- 5.5
- 7.7
- 9.9
- 12.1
- 14.2
- 16.3
- 18.4
- 20.4
- 24.2
- 27.9
- 31.3
- 34.6
- 37.9
- 41.1
- 44.2
- 47.2
- 50.2
- 53.0
- 55.9
- 58.6
- 61.4
- 64.1
- 66.7
- 69.3
- 71.8
- 74.2
- 76.7
- 79.0
- 81.3
- 83.6
- 85.8
- 87.9
- 90.0
- 92.1
- 94.1
- 96.0
- 97.9
- 99.7
- 101.4
- 103.0
- 104.7
- 106.2
(continued)
MRF6V2010NR1 MRF6V2010NBR1
12
RF Device Data
Freescale Semiconductor