33970 Datasheet, PDF (6/36 Pages) Freescale Semiconductor, Inc – Dual Gauge Driver Integrated Circuit with Improved Damping Algorithms

ELECTRICAL CHARACTERISTICS
STATIC ELECTRICAL CHARACTERISTICS
Table 3. Static Electrical Characteristics (continued)
Characteristics noted under conditions 4.75 V < V_DD < 5.25 V, -40°C < T_A < 125°C, GND = 0 V unless otherwise noted. Typical
values noted reflect the approximate parameter means at T_A = 25°C under nominal conditions unless otherwise noted.
Characteristic
Symbol
Min
Typ
Max
Unit
POWER OUTPUTS (continued)
Output Flyback Clamp ⁽¹⁰⁾
Output Current Limit (Output = VST6)
Overtemperature Shutdown ⁽¹⁰⁾
Overtemperature Hysteresis ⁽¹⁰⁾
CONTROL I/O
Input Logic High Voltage ⁽¹¹⁾
Input Logic Low Voltage ⁽¹¹⁾
Input Logic Voltage Hysteresis ⁽¹⁰⁾
Input Logic Pull Down Current (SI, SCLK)
Input Logic Pull-Up Current (CS, RST)
SO High-State Output Voltage (I_OH = 1.0 mA)
SO Low-State Output Voltage (I_OL = -1.6 mA)
SO Tri-State Leakage Current (CS ≥ 3.5 V)
Input Capacitance ⁽¹²⁾
SO Tri-State Capacitance ⁽¹²⁾
ANALOG TO DIGITAL CONVERTER (RTZ ACCUMULATOR COUNT)
ADC Gain ^{(10), (13)}
V_FB
I_LIM
OT_SD
OT_HYST
–
V_ST6 + 0.5 V_ST6 + 1.0
V
40
100
170
mA
155
–
180
°C
8.0
–
16
°C
V_IH
2.0
–
–
V
V_IL
–
–
0.8
V
V_IN(HYST)
–
100
–
mV
I_DWN
3.0
–
20
µA
I_UP
5.0
–
20
µA
V_SOH
0.8 V_DD
–
–
V
V_SOL
–
0.2
0.4
V
I_SOLK
-5.0
0
5.0
µA
C_IN
–
4.0
12
pF
C_SO
–
–
20
pF
G_ADC
100
188
270 Counts/V/
ms
Notes
10. This parameter is guaranteed by design; however, it is not production tested.
11. V_DD = 5.0 V.
12. Capacitance not measured. This parameter is guaranteed by design; however, it is not production tested.
13. Reference Figure 8, RTZ Accumulator (Typical)
33970
6
Analog Integrated Circuit Device Data
Freescale Semiconductor