MC9S08JM60 Datasheet, PDF (369/386 Pages) Freescale Semiconductor, Inc – Microcontrollers

Appendix A Electrical Characteristics
Table A-18. Radiated Emissions
Parameter
Symbol Conditions
Radiated emissions,
electric field
V_{RE_TEM}
V_DD = TBD
T_A = +25^oC
1 _{Data based on qualification test results.}
Frequency
f_OSC/f_BUS
0.15 – 50 MHz
50 – 150 MHz
150 – 500 MHz
500 – 1000 MHz
IEC Level
SAE Level
4 MHz crystal
24 MHz Bus
Level¹
(Max)
TBD
TBD
TBD
TBD
TBD
TBD
Unit
dBμV
—
—
A.15.2 Conducted Transient Susceptibility
Microcontroller transient conducted susceptibility is measured in accordance with an internal Freescale
test method. The measurement is performed with the microcontroller installed on a custom EMC
evaluation board and running specialized EMC test software designed in compliance with the test method.
The conducted susceptibility is determined by injecting the transient susceptibility signal on each pin of
the microcontroller. The transient waveform and injection methodology is based on IEC 61000-4-4
(EFT/B). The transient voltage required to cause performance degradation on any pin in the tested
configuration is greater than or equal to the reported levels unless otherwise indicated by footnotes below
the table.
Parameter
Table A-19. Conducted Transient Susceptibility
Symbol
Conditions
f_OSC/f_BUS
Result
Amplitude¹
(Min)
Unit
A
TBD
Conducted susceptibility, electrical
fast transient/burst (EFT/B)
V_{CS_EFT}
V_DD = TBD
T_A = +25^oC
4 MHz
crystal
24 MHz Bus
B
C
TBD
kV
TBD
D
TBD
1 _{Data based on qualification test results. Not tested in production.}
The susceptibility performance classification is described in Table A-20.
Table A-20. Susceptibility Performance Classification
Result
A
B
Performance Criteria
No failure
The MCU performs as designed during and after exposure.
Self-recovering ^{The MCU does not perform as designed during exposure. The MCU returns}
failure
automatically to normal operation after exposure is removed.
MC9S08JM60 Series Data Sheet, Rev. 2
Freescale Semiconductor
369