K50P121M100SF2V2 Datasheet, PDF (33/79 Pages) Freescale Semiconductor, Inc – K50 Sub-Family

Peripheral operating requirements and behaviors
Table 21. Flash command timing specifications (continued)
Symbol Description
Min.
Typ.
Program Partition for EEPROM execution time
t_pgmpart64k
t_pgmpart256k
• 64 KB FlexNVM
• 256 KB FlexNVM
—
138
—
145
Set FlexRAM Function execution time:
t_setramff
• Control Code 0xFF
—
70
t_setram32k
t_setram64k
t_setram256k
• 32 KB EEPROM backup
• 64 KB EEPROM backup
• 256 KB EEPROM backup
—
0.8
—
1.3
—
4.5
Byte-write to FlexRAM for EEPROM operation
t_eewr8bers Byte-write to erased FlexRAM location execution
—
175
time
Byte-write to FlexRAM execution time:
t_eewr8b32k
• 32 KB EEPROM backup
—
385
t_eewr8b64k
t_eewr8b128k
t_eewr8b256k
• 64 KB EEPROM backup
• 128 KB EEPROM backup
• 256 KB EEPROM backup
—
475
—
650
—
1000
Word-write to FlexRAM for EEPROM operation
t_eewr16bers Word-write to erased FlexRAM location
execution time
—
175
Word-write to FlexRAM execution time:
t_eewr16b32k
• 32 KB EEPROM backup
—
385
t_eewr16b64k
t_eewr16b128k
t_eewr16b256k
• 64 KB EEPROM backup
• 128 KB EEPROM backup
• 256 KB EEPROM backup
—
475
—
650
—
1000
Longword-write to FlexRAM for EEPROM operation
t_eewr32bers Longword-write to erased FlexRAM location
execution time
—
360
Longword-write to FlexRAM execution time:
t_eewr32b32k
t_eewr32b64k
t_eewr32b128k
t_eewr32b256k
• 32 KB EEPROM backup
• 64 KB EEPROM backup
• 128 KB EEPROM backup
• 256 KB EEPROM backup
—
630
—
810
—
1200
—
1900
Max.
—
—
—
1.2
1.9
5.5
260
1800
2000
2400
3200
260
1800
2000
2400
3200
540
2050
2250
2675
3500
Unit
Notes
ms
ms
μs
ms
ms
ms
μs
3
μs
μs
μs
μs
μs
μs
μs
μs
μs
μs
μs
μs
μs
μs
1. Assumes 25MHz flash clock frequency.
2. Maximum times for erase parameters based on expectations at cycling end-of-life.
3. For byte-writes to an erased FlexRAM location, the aligned word containing the byte must be erased.
K50 Sub-Family Data Sheet, Rev. 1, 6/2012.
Freescale Semiconductor, Inc.
Preliminary
33
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