K10P144M120SF3 Datasheet, PDF (33/75 Pages) Freescale Semiconductor, Inc – K10 Sub-Family Data Sheet

6.4.1.3
Peripheral operating requirements and behaviors
Flash (FTFE) current and power specfications
Table 21. Flash (FTFE) current and power specfications
Symbol
I_{DD_PGM}
Description
Worst case programming current in program flash
Typ.
Unit
10
mA
6.4.1.4 Reliability specifications
Table 22. NVM reliability specifications
Symbol Description
Min.
Program Flash
t_nvmretp10k Data retention after up to 10 K cycles
5
t_nvmretp1k Data retention after up to 1 K cycles
10
t_nvmretp100 Data retention after up to 100 cycles
15
n_nvmcycp Cycling endurance
10 K
Data Flash
t_nvmretd10k Data retention after up to 10 K cycles
5
t_nvmretd1k Data retention after up to 1 K cycles
10
t_nvmretd100 Data retention after up to 100 cycles
15
n_nvmcycd Cycling endurance
10 K
FlexRAM as EEPROM
t_nvmretee100 Data retention up to 100% of write endurance
5
t_nvmretee10 Data retention up to 10% of write endurance
10
t_nvmretee1 Data retention up to 1% of write endurance
15
Write endurance
n_nvmwree16
n_nvmwree128
n_nvmwree512
n_nvmwree4k
n_nvmwree32k
• EEPROM backup to FlexRAM ratio = 16
• EEPROM backup to FlexRAM ratio = 128
• EEPROM backup to FlexRAM ratio = 512
• EEPROM backup to FlexRAM ratio = 4096
• EEPROM backup to FlexRAM ratio =
32,768
TBD
TBD
TBD
TBD
TBD
Typ.¹
50
100
100
35 K
50
100
100
35 K
50
100
100
TBD
TBD
TBD
TBD
TBD
Max.
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Unit
years
years
years
cycles
years
years
years
cycles
years
years
years
writes
writes
writes
writes
writes
Notes
2
2
2
3
2
2
2
3
2
2
2
4
1. Typical data retention values are based on measured response accelerated at high temperature and derated to a constant
25°C profile. Engineering Bulletin EB618 does not apply to this technology.
2. Data retention is based on T_javg = 55°C (temperature profile over the lifetime of the application).
3. Cycling endurance represents number of program/erase cycles at -40°C ≤ T_j ≤ 125°C.
4. Write endurance represents the number of writes to each FlexRAM location at -40°C ≤Tj ≤ 125°C influenced by the cycling
endurance of the FlexNVM (same value as data flash) and the allocated EEPROM backup per subsystem. Minimum and
typical values assume all byte-writes to FlexRAM.
K10 Sub-Family Data Sheet Data Sheet, Rev. 3, 2/2012.
Freescale Semiconductor, Inc.
Preliminary
33