K10P144M120SF3 Datasheet, PDF (32/75 Pages) Freescale Semiconductor, Inc – K10 Sub-Family Data Sheet

Peripheral operating requirements and behaviors
Table 20. Flash command timing specifications (continued)
Symbol Description
Swap Control execution time
t_swapx01
t_swapx02
t_swapx04
t_swapx08
• control code 0x01
• control code 0x02
• control code 0x04
• control code 0x08
t_pgmpart Program Partition for EEPROM execution time
Set FlexRAM Function execution time:
t_setram64k
t_setram128k
t_setram256k
t_setram512k
• 64 KB EEPROM backup
• 128 KB EEPROM backup
• 256 KB EEPROM backup
• 512 KB EEPROM backup
t_eewr8bers Byte-write to erased FlexRAM location execution
time
Byte-write to FlexRAM execution time:
t_eewr8b64k
t_eewr8b128k
t_eewr8b256k
t_eewr8b512k
• 64 KB EEPROM backup
• 128 KB EEPROM backup
• 256 KB EEPROM backup
• 512 KB EEPROM backup
t_eewr16bers 16-bit write to erased FlexRAM location
execution time
16-bit write to FlexRAM execution time:
t_eewr16b64k
t_eewr16b128k
t_eewr16b256k
t_eewr16b512k
• 64 KB EEPROM backup
• 128 KB EEPROM backup
• 256 KB EEPROM backup
• 512 KB EEPROM backup
t_eewr32bers 32-bit write to erased FlexRAM location
execution time
t_eewr32b64k 32-bit-write to FlexRAM execution time:
t_eewr32b128k
• 64 KB EEPROM backup
t_eewr32b256k
t_eewr32b512k
• 128 KB EEPROM backup
• 256 KB EEPROM backup
• 512 KB EEPROM backup
Min.
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ.
185
65
65
25
TBD
TBD
TBD
TBD
TBD
100
TBD
TBD
TBD
TBD
100
TBD
TBD
TBD
TBD
200
TBD
TBD
TBD
TBD
Max.
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
Unit
μs
μs
μs
μs
ms
ms
ms
ms
ms
μs
ms
ms
ms
ms
μs
ms
ms
ms
ms
μs
ms
ms
ms
ms
1. Assumes 25MHz flash clock frequency.
2. Maximum times for erase parameters based on expectations at cycling end-of-life.
3. For byte-writes to an erased FlexRAM location, the aligned word containing the byte must be erased.
Notes
3
K10 Sub-Family Data Sheet Data Sheet, Rev. 3, 2/2012.
32
Preliminary
Freescale Semiconductor, Inc.