S9S08SG8E2MSC Datasheet, PDF (315/320 Pages) Freescale Semiconductor, Inc – MC9S08SG8 MC9S08SG4 Data Sheet Addendum

Appendix A Electrical Characteristics
A.13 FLASH Specifications
This section provides details about program/erase times and program-erase endurance for the FLASH
memory.
Program and erase operations do not require any special power sources other than the normal V_DD supply.
For more detailed information about program/erase operations, see the Memory section.
Table A-16. FLASH Characteristics
Nu
m
C
Characteristic
Symbol
Min Typical Max
Temp Rated¹
Unit
Stand
ard
AEC
Grade
0
1
—
Supply voltage for
program/erase
V_prog/erase
2.7
5.5
V
x
x
2
—
Supply voltage for read
operation
V_Read
2.7
5.5
V
x
x
3 — Internal FCLK frequency²
f_FCLK
150
200
kHz
x
x
 — Internal FCLK period (1/f_FCLK)
t_Fcyc
5
6.67
s
x
x
5
—
Byte program time (random
location)³
t_prog
9
t_Fcyc
x
x
6
—
Byte program time (burst
mode)²
t_Burst
4
t_Fcyc
x
x
7 — Page erase time²
t_Page
4000
t_Fcyc
x
x
8 — Mass erase time²
t_Mass
20,000
t_Fcyc
x
x
Program/erase endurance⁴
9C
T_L to T_H = –40C to +125C
T_L to T_H = –40C to +150C
n_FLPE
10,000
10,000
—
—
—
cycles
x
—
—
—
x
T = 25C
10,000 100,000
—
x
x
10 C Data retention⁵
t_{D_ret}
15
100
—
years
x
x
1 _{Electrical characteristics only apply to the temperature rated devices marked with x.}
2 _{The frequency of this clock is controlled by a software setting.}
3 _{These values are hardware state machine controlled. User code does not need to count cycles. This information supplied for}
calculating approximate time to program and erase.
4 _{Typical endurance for FLASH is based on the intrinsic bit cell performance. For additional information on how Freescale defines}
typical endurance, please refer to Engineering Bulletin EB619/D, Typical Endurance for Nonvolatile Memory.
5 _{Typical data retention values are based on intrinsic capability of the technology measured at high temperature and de-rated to}
25C using the Arrhenius equation. For additional information on how Freescale defines typical data retention, please refer to
Engineering Bulletin EB618/D, Typical Data Retention for Nonvolatile Memory.
MC9S08SG8 MCU Series Data Sheet, Rev. 7
Freescale Semiconductor
311