K22P48M50SF4 Datasheet, PDF (31/55 Pages) Freescale Semiconductor, Inc – K22 Sub-Family Data Sheet

Peripheral operating requirements and behaviors
Table 20. Flash command timing specifications (continued)
Symbol
t_swapx01
t_swapx02
t_swapx04
t_swapx08
Description
Swap Control execution time
• control code 0x01
• control code 0x02
• control code 0x04
• control code 0x08
Min.
—
—
—
—
Typ.
200
70
70
—
Max.
—
150
150
30
Unit
Notes
μs
μs
μs
μs
Program Partition for EEPROM execution time
t_pgmpart64k
• 64 KB FlexNVM
—
138
—
ms
t_setramff
t_setram32k
t_setram64k
Set FlexRAM Function execution time:
• Control Code 0xFF
• 32 KB EEPROM backup
• 64 KB EEPROM backup
—
70
—
μs
—
0.8
ms
—
Byte-write to FlexRAM for EEPROM operation
t_eewr8bers Byte-write to erased FlexRAM location execution
—
175
260
μs
3
time
Byte-write to FlexRAM execution time:
t_eewr8b32k
t_eewr8b64k
t_eewr8b128k
• 32 KB EEPROM backup
• 64 KB EEPROM backup
• 128 KB EEPROM backup
—
385
1800
μs
—
475
2000
μs
650
2400
μs
Word-write to FlexRAM for EEPROM operation
t_eewr16bers Word-write to erased FlexRAM location
execution time
—
175
260
μs
Word-write to FlexRAM execution time:
t_eewr16b32k
t_eewr16b64k
t_eewr16b128k
• 32 KB EEPROM backup
• 64 KB EEPROM backup
• 128 KB EEPROM backup
—
385
1800
μs
—
475
2000
μs
—
650
2400
μs
Longword-write to FlexRAM for EEPROM operation
t_eewr32bers Longword-write to erased FlexRAM location
execution time
—
360
540
μs
Longword-write to FlexRAM execution time:
t_eewr32b32k
t_eewr32b64k
t_eewr32b128k
• 32 KB EEPROM backup
• 64 KB EEPROM backup
• 128 KB EEPROM backup
—
630
2050
μs
—
810
2250
μs
—
1200
2675
μs
1. Assumes 25MHz flash clock frequency.
2. Maximum times for erase parameters based on expectations at cycling end-of-life.
3. For byte-writes to an erased FlexRAM location, the aligned word containing the byte must be erased.
K22 Sub-Family Data Sheet Data Sheet, Rev. 3, 08/2012.
Freescale Semiconductor, Inc.
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