MC9S08QE8 Datasheet, PDF (28/46 Pages) Freescale Semiconductor, Inc – 8-Bit HCS08 Central Processor Unit

Electrical Characteristics
3 _{The program and erase currents are additional to the standard run IDD. These values are measured at room temperatures}
with V_DD = 3.0 V, bus frequency = 4.0 MHz.
4 _{Typical endurance for flash was evaluated for this product family on the 9S12Dx64. For additional information on how}
Freescale defines typical endurance, please refer to Engineering Bulletin EB619, Typical Endurance for Nonvolatile
Memory.
5 _{Typical data retention values are based on intrinsic capability of the technology measured at high temperature and}
de-rated to 25°C using the Arrhenius equation. For additional information on how Freescale defines typical data retention,
please refer to Engineering Bulletin EB618, Typical Data Retention for Nonvolatile Memory.
3.14 EMC Performance
Electromagnetic compatibility (EMC) performance is highly dependant on the environment in which the MCU resides. Board
design and layout, circuit topology choices, location and characteristics of external components as well as MCU software
operation all play a significant role in EMC performance. The system designer should consult Freescale applications notes such
as AN2321, AN1050, AN1263, AN2764, and AN1259 for advice and guidance specifically targeted at optimizing EMC
performance.
3.14.1 Conducted Transient Susceptibility
Microcontroller transient conducted susceptibility is measured in accordance with an internal Freescale test method. The
measurement is performed with the microcontroller installed on a custom EMC evaluation board and running specialized EMC
test software designed in compliance with the test method. The conducted susceptibility is determined by injecting the transient
susceptibility signal on each pin of the microcontroller. The transient waveform and injection methodology is based on IEC
61000-4-4 (EFT/B). The transient voltage required to cause performance degradation on any pin in the tested configuration is
greater than or equal to the reported levels unless otherwise indicated by footnotes below Table 18.
Parameter
Table 18. Conducted Susceptibility, EFT/B
Symbol
Conditions
f_OSC/f_BUS
Result
Amplitude¹
(Min)
Unit
A
2.3
Conducted susceptibility, electrical
fast transient/burst (EFT/B)
V_{CS_EFT}
V_DD = 3.3 V
T_A = +25^oC
package type
32 LQFP
8 MHz
crystal
8 MHz bus
B
C
4.0
kV
>4.0
D
>4.0
1 _{Data based on qualification test results. Not tested in production.}
The susceptibility performance classification is described in Table 19.
Table 19. Susceptibility Performance Classification
Result
A
No failure
Performance Criteria
The MCU performs as designed during and after exposure.
B
Self-recovering The MCU does not perform as designed during exposure. The MCU returns
failure
automatically to normal operation after exposure is removed.
C
Soft failure
The MCU does not perform as designed during exposure. The MCU does not return to
normal operation until exposure is removed and the RESET pin is asserted.
MC9S08QE8 Series, Rev. 3
28
Preliminary
Freescale Semiconductor
Subject to Change Without Notice